BAV99 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual in Series FEATURES Fast switching speed 3 High conductance Surface mount package ideally suited for automatic insertion Connected in series 12 AEC-Q101 qualified available 18109 Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAV99-E3-08 or BAV99-E3-18 BAV99 Dual serial JE Tape and reel BAV99-HE3-08 or BAV99-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Non repetitive peak reverse voltage V 100 RM Repetitive peak reverse voltage V = working peak reverse voltage V = V = V 70 RRM RWM R = DC blocking voltage t = 1 s 1 p Peak forward surge current I A FSM t = 1 s 4.5 p Half wave rectification with resistive load Average forward current and f 50 MHz, on ceramic substrate I 150 F(AV) 10 mm x 8 mm x 0.7 mm mA On ceramic substrate Forward current I 250 F 10 mm x 8 mm x 0.7 mm On ceramic substrate Power dissipation P 300 mW tot 10 mm x 8 mm x 0.7 mm THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On ceramic substrate Junction ambient R 430 K/W thJA 10 mm x 8 mm x 0.7 mm Junction and storage temperature range T = T -55 to +150 C j stg Operating temperature range T -55 to +150 C op Rev. 2.1, 13-Feb-18 Document Number: 85718 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV99 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA 0.715 V F I = 10 mA 0.855 V F Forward voltage V F I = 50 mA 1 V F I = 150 mA 1.25 V F V = 70 V 2500 nA R Reverse current V = 70 V, Tj = 150 C I 50 A R R V = 25 V, Tj = 150 C 30 A R Diode capacitance V = 0, f = 1 MHz C 1.5 pF R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 2 10 D = 0.005 0.01 0.02 100 0.05 1 0.1 10 T = 100 C 0.2 j / 10 FM 25 C 0 10 1 -1 10 0.1 t p t p D = T T -2 0.01 10 -6 -5 -4 -3 -2 -1 -0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 10 10 10 10 10 10 s 14356 V Forward Voltage (V) - F 22290 t Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Peak forward current / = f (t ) FM p LAYOUT FOR R TEST thJA Thickness: Fiberglass 1.5 mm (0.059 inches) Copper leads 0.3 mm (0.012 inches) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Rev. 2.1, 13-Feb-18 Document Number: 85718 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F