X-On Electronics has gained recognition as a prominent supplier of BAV99-HE3-18 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAV99-HE3-18 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAV99-HE3-18 Vishay

BAV99-HE3-18 electronic component of Vishay
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Part No.BAV99-HE3-18
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 70V 250mA 4.5A IFSM Dual Series
Datasheet: BAV99-HE3-18 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2952 ea
Line Total: USD 0.3 
Availability - 19390
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19390
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2952
10 : USD 0.2053
100 : USD 0.0845
1000 : USD 0.051
20000 : USD 0.0349
50000 : USD 0.0336

   
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We are delighted to provide the BAV99-HE3-18 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV99-HE3-18 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAV99 www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual in Series FEATURES Fast switching speed 3 High conductance Surface mount package ideally suited for automatic insertion Connected in series 12 AEC-Q101 qualified available 18109 Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS click logo to get started please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.8 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAV99-E3-08 or BAV99-E3-18 BAV99 Dual serial JE Tape and reel BAV99-HE3-08 or BAV99-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Non repetitive peak reverse voltage V 100 RM Repetitive peak reverse voltage V = working peak reverse voltage V = V = V 70 RRM RWM R = DC blocking voltage t = 1 s 1 p Peak forward surge current I A FSM t = 1 s 4.5 p Half wave rectification with resistive load Average forward current and f 50 MHz, on ceramic substrate I 150 F(AV) 10 mm x 8 mm x 0.7 mm mA On ceramic substrate Forward current I 250 F 10 mm x 8 mm x 0.7 mm On ceramic substrate Power dissipation P 300 mW tot 10 mm x 8 mm x 0.7 mm THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On ceramic substrate Junction ambient R 430 K/W thJA 10 mm x 8 mm x 0.7 mm Junction and storage temperature range T = T -55 to +150 C j stg Operating temperature range T -55 to +150 C op Rev. 2.1, 13-Feb-18 Document Number: 85718 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV99 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA 0.715 V F I = 10 mA 0.855 V F Forward voltage V F I = 50 mA 1 V F I = 150 mA 1.25 V F V = 70 V 2500 nA R Reverse current V = 70 V, Tj = 150 C I 50 A R R V = 25 V, Tj = 150 C 30 A R Diode capacitance V = 0, f = 1 MHz C 1.5 pF R D I = 10 mA to i = 1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 2 10 D = 0.005 0.01 0.02 100 0.05 1 0.1 10 T = 100 C 0.2 j / 10 FM 25 C 0 10 1 -1 10 0.1 t p t p D = T T -2 0.01 10 -6 -5 -4 -3 -2 -1 -0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 10 10 10 10 10 10 s 14356 V Forward Voltage (V) - F 22290 t Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Peak forward current / = f (t ) FM p LAYOUT FOR R TEST thJA Thickness: Fiberglass 1.5 mm (0.059 inches) Copper leads 0.3 mm (0.012 inches) 7.5 (0.3) 3 (0.12) 1 (0.4) 2 (0.8) 1 (0.4) 12 (0.47) 2 (0.8) 0.8 (0.03) 15 (0.59) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Rev. 2.1, 13-Feb-18 Document Number: 85718 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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