X-On Electronics has gained recognition as a prominent supplier of BAV99WT1G Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. BAV99WT1G Small Signal Switching Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

BAV99WT1G ON Semiconductor

BAV99WT1G electronic component of ON Semiconductor
BAV99WT1G ON Semiconductor
BAV99WT1G Small Signal Switching Diodes
BAV99WT1G  Semiconductors

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See Product Specifications
Part No. BAV99WT1G
Manufacturer: ON Semiconductor
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 70V 215mA Dual
Datasheet: BAV99WT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0209 ea
Line Total: USD 62.7 
Availability - 96030
Ship by Thu. 06 Feb to Wed. 12 Feb
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
96030
Ship by Thu. 06 Feb to Wed. 12 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0209
9000 : USD 0.0192
27000 : USD 0.0188
51000 : USD 0.0184
102000 : USD 0.0178
150000 : USD 0.0175
252000 : USD 0.0173
501000 : USD 0.017

57263
Ship by Thu. 06 Feb to Wed. 12 Feb
MOQ : 347
Multiples : 1
347 : USD 0.1872
668 : USD 0.0974
679 : USD 0.0957
1667 : USD 0.039
1684 : USD 0.0386
1695 : USD 0.0384
1969 : USD 0.033
3000 : USD 0.0318
6000 : USD 0.0306
15000 : USD 0.0282
30000 : USD 0.027

1338600
Ship by Thu. 06 Feb to Wed. 12 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0312
9000 : USD 0.0273
24000 : USD 0.025
45000 : USD 0.0212
99000 : USD 0.02

2405
Ship by Thu. 13 Feb to Tue. 18 Feb
MOQ : 20
Multiples : 20
20 : USD 0.0457
200 : USD 0.0362
600 : USD 0.0267
3000 : USD 0.0216
9000 : USD 0.0195
21000 : USD 0.0182

732
Ship by Tue. 04 Feb to Thu. 06 Feb
MOQ : 1
Multiples : 1
1 : USD 0.196
5 : USD 0.168
50 : USD 0.0938
100 : USD 0.0742
250 : USD 0.0546

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAV99WT1G from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV99WT1G and other electronic components in the Small Signal Switching Diodes category and beyond.

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BAV99W, BAV99RW SC-70/SOT-323 Dual Series Switching Diodes The BAV99WT1G is a smaller package, equivalent to the BAV99LT1G. www.onsemi.com Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SC70 CASE 419 Compliant* ANODE CATHODE Suggested Applications 1 2 ESD Protection Polarity Reversal Protection 3 Data Line Protection CATHODE/ANODE BAV99WT1 Inductive Load Protection SC70, CASE 419, STYLE 9 Steering Logic CATHODE ANODE 1 2 MAXIMUM RATINGS (Each Diode) 3 Rating Symbol Value Unit CATHODE/ANODE Reverse Voltage V 100 Vdc R BAV99RWT1 SC70, CASE 419, STYLE 10 Forward Current I 215 mAdc F Peak Forward Surge Current I 500 mAdc FM(surge) MARKING DIAGRAM Repetitive Peak Reverse Voltage V 100 V RRM A7 = BAV99W Average Rectified Forward Current I 715 mA F(AV) X7 M F7 = BAV99RW (Note 1) (averaged over any 20 ms period) M = Date Code = PbFree Package 1 Repetitive Peak Forward Current I 450 mA FRM NonRepetitive Peak Forward Current I A FSM 2.0 t = 1.0 s ORDERING INFORMATION t = 1.0 ms 1.0 t = 1.0 s 0.5 Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the BAV99WT1G SC70 3,000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. SBAV99WT1G SC70 3,000 / Tape & Reel 1. FR5 = 1.0 0.75 0.062 in. (PbFree) BAV99RWT1G SC70 3,000 / Tape & Reel (PbFree) SBAV99RWT1G SC70 3,000 / Tape & Reel (PbFree) NSVBAV99WT3G SC70 10,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2017 Rev. 10 BAV99WT1/DBAV99W, BAV99RW THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (Note 1) T = 25C P 200 mW A D Derate above 25C 1.6 mW/C Thermal Resistance JunctiontoAmbient R 625 C/W JA Total Device Dissipation Alumina Substrate, (Note 2) T = 25C P 300 mW A D Derate above 25C 2.4 mW/C Thermal Resistance JunctiontoAmbient R 417 C/W JA Junction and Storage Temperature T , T 65 to +150 C J stg ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 A) 100 (BR) Reverse Voltage Leakage Current I Adc R (V = 100 Vdc) 1.0 R (V = 25 Vdc, T = 150C) 30 R J (V = 70 Vdc, T = 150C) 50 R J Diode Capacitance C pF D (V = 0, f = 1.0 MHz) 1.5 R Forward Voltage V mVdc F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Reverse Recovery Time t ns rr (I = I = 10 mAdc, i = 1.0 mAdc) (Figure 1) R = 100 6.0 F R R(REC) L Forward Recovery Voltage V V FR (I = 10 mA, t = 20 ns) 1.75 F r Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 820 +10 V 2 k 0.1 F I F t t t r p I F 100 H 10% t t rr 0.1 F DUT 90% 50 OUTPUT 50 INPUT i = 1 mA R(REC) PULSE SAMPLING I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: (a) A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: (b) Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: (c) t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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