BAW56M3T5G ON Semiconductor

BAW56M3T5G Dual Switching Diode Common Anode The BAW56M3T5G device is a spinoff of our popular SOT23 threeleaded device. It is designed for switching applications and is housed in the SOT723 surface mount package. This device is ideal BAW56M3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V 70 V (BR) (I = 100 A) (BR) Reverse Voltage Leakage Current I A R (V = 25 V, T = 150C) 30 R J (V = 70 V) 2.5 R (V = 70 V, T = 150C) 50 R J Diode Capacitance C 2.0 pF D (V = 0 V, f = 1.0 MHz) R Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 855 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F Reverse Recovery Time t 6.0 ns rr (I = I = 10 mA, I = 1.0 mA) (Figure 1) R = 100 F R R(REC) L 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R SAMPLING V PULSE R OUTPUT PULSE OSCILLOSCOPE GENERATOR INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit