BAW 56S H6327 Infineon

BAW56... Silicon Switching Diode For high-speed switching applications Common anode configuration BAW56S / U: For orientation in reel see package information below 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAW56 BAW56S BAW56W BAW56U Type Package Configuration Marking BAW56 SOT23 common anode A1s BAW56S SOT363 double common anode A1s BAW56U SC74 double common anode A1s BAW56W SOT323 common anode A1s 1 Pb-containing package may be available upon special request 2007-09-19 1BAW56... Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 80 V Diode reverse voltage V R 85 Peak reverse voltage V RM 200 mA Forward current I F Non-repetitive peak surge forward current I A FSM t = 1 s 4.5 t = 1 ms 1 t = 1 s, single 0.5 t = 1 s, double 0.75 mW Total power dissipation P tot BAW56, T 28C 330 S BAW56S, T 85C 250 S BAW56U, T 90C 250 S BAW56W, T 103C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAW56 360 BAW56S 260 BAW56U 240 BAW56W 190 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2007-09-19 2