BAW56TT1G, SBAW56TT1G Dual Switching Diode Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant CASE 463 SC75/SOT416 STYLE 4 MAXIMUM RATINGS (T = 25C) A CATHODE Rating Symbol Max Unit 1 3 Reverse Voltage V 70 Vdc R ANODE 2 Forward Current I 200 mAdc F CATHODE Peak Forward Surge Current I 500 mAdc FM(surge) MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, P A1 M D FR4 Board (Note 1), T = 25C 225 mW A Derated above 25C 1.8 mW/C 1 Thermal Resistance, JunctiontoAmbient R 555 C/W JA (Note 1) A1 = Specific Device Code M = Date Code* Total Device Dissipation, P D = PbFree Package FR4 Board (Note 2), T = 25C 360 mW A Derated above 25C 2.9 mW/C (Note: Microdot may be in either location) Thermal Resistance, JunctiontoAmbient R 345 C/W JA *Date Code orientation may vary depending upon (Note 2) manufacturing location. Junction and Storage T , T 55 to +150 C J stg Temperature Range ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. BAW56TT1G SC75/SOT416 3,000 / 1. FR4 Minimum Pad (PbFree) Tape & Reel 2. FR4 1.0 1.0 Inch Pad SBAW56TT1G SC75/SOT416 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2016 Rev. 5 BAW56TT1/DBAW56TT1G, SBAW56TT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V Vdc (BR) (I = 100 Adc) 70 (BR) Reverse Voltage Leakage Current I Adc R (V = 25 Vdc, T = 150C) 30 R J (V = 70 Vdc) 2.5 R (V = 70 Vdc, T = 150C) 50 R J Diode Capacitance C pF D (V = 0, f = 1.0 MHz) 2.0 R Forward Voltage V mVdc F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Reverse Recovery Time t ns rr (I = I = 10 mAdc, R = 100 , I = 1.0 mAdc) (Figure 1) 6.0 F R L R(REC) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R V PULSE SAMPLING R OUTPUT PULSE OSCILLOSCOPE GENERATOR INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2