BAW56L, SBAW56L Dual Switching Diode Common Anode Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and www.onsemi.com PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (EACH DIODE) SOT23 (TO236) Rating Symbol Value Unit CASE 318 STYLE 12 Reverse Voltage V 70 V R Forward Current I 200 mA F CATHODE Forward Surge Current I 2.0 A FSM 1 ANODE (60 Hz 1 cycle) 3 NonRepetitive Peak Forward Current I 4.0 A 2 FSM t = 1 s (Note 3) CATHODE Repetitive Peak Forward Current I 500 mA FRM Pulse Wave = 1 sec, Duty Cycle = 66% MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit A1 M Total Device Dissipation FR5 Board P 225 mW D (Note 1) T = 25C A 1 Derate above 25C 1.8 mW/C Thermal Resistance, R 556 C/W A1 = Device Code JA JunctiontoAmbient M = Date Code* = PbFree Package Total Device Dissipation P 300 mW D Alumina Substrate, (Note: Microdot may be in either location) (Note 2) T = 25C 2.4 mW/C A *Date Code orientation and/or overbar may Derate above 25C vary depending upon manufacturing location. Thermal Resistance, R 417 C/W JA JunctiontoAmbient Junction and Storage Temperature T , T 55 to C J stg ORDERING INFORMATION +150 Device Package Shipping Stresses exceeding those listed in the Maximum Ratings table may damage the BAW56LT1G SOT23 3,000 / device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (PbFree) Tape & Reel 1. FR5 = 1.0 0.75 0.062 in. SBAW56LT1G SOT23 3,000 / 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. (PbFree) Tape & Reel 3. Square Wave T = 25C. j BAW56LT3G SOT23 10,000 / (PbFree) Tape & Reel SBAW56LT3G SOT23 10,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 10 BAW56LT1/DBAW56L, SBAW56L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Each Diode) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V V (BR) (I = 100 A) 70 (BR) Reverse Voltage Leakage Current I A R (V = 25 V, T = 150C) 30 R J (V = 70 V) 2.5 R (V = 70 V, T = 150C) 50 R J Diode Capacitance C pF D (V = 0 V, f = 1.0 MHz) 2.0 R Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 855 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F Reverse Recovery Time t ns rr (I = I = 10 mA, I = 1.0 mA) (Figure 1) R = 100 6.0 F R R(REC) L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2