BAV 99S H6327 Infineon

BAV99... Silicon Switching Diode For high-speed switching applications Series pair configuration BAV99S / U: For orientation in reel see package information below 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAV99 BAV99S BAV99W BAV99U Type Package Configuration Marking BAV99 SOT23 series A7s BAV99S SOT363 dual series A7s BAV99U SC74 dual series A7s BAV99W SOT323 series A7s 1 Pb-containing package may be available upon special request 2007-09-19 1BAV99... Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 80 V Diode reverse voltage V R 85 Peak reverse voltage V RM 200 mA Forward current I F Non-repetitive peak surge forward current I A FSM t = 1 s 4.5 t = 1 ms 1 t = 1 s, single 0.5 t = 1 s, double 0.75 mW Total power dissipation P tot BAV99, T 28C 330 S BAV99S, T 85C 250 S BAV99U, T 113C 250 S BAV99W, T 110C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAV99 360 BAV99S 260 BAV99U 150 BAV99W 160 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2007-09-19 2