BAV70UE6327HTSA1 Infineon

BAV70... Silicon Switching Diode For high-speed switching applications Common cathode configuration BAV70S / U: For orientation in reel see package information below 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAV70 BAV70S BAV70W BAV70U Type Package Configuration Marking BAV70 SOT23 common cathode A4s BAV70S SOT363 double common cathode A4s BAV70U SC74 double common cathode A4s BAV70W SOT323 common cathode A4s 1 Pb-containing package may be available upon special request 2007-09-19 1BAV70... Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 80 V Diode reverse voltage V R 85 Peak reverse voltage V RM 200 mA Forward current I F Non-repetitive peak surge forward current I A FSM t = 1 s 4.5 t = 1 ms 1 t = 1 s single 0.5 t = 1 s double 0.75 mW Total power dissipation P tot BAV70, T 33C 250 S BAV70S, T 85C 250 S BAV70U, T 90C 250 S BAV70W, T 103C 250 S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R thJS BAV70 460 BAV70S 260 BAV70U 240 BAV70W 190 1 For calculation of R please refer to Application Note Thermal Resistance thJA 2007-09-19 2