BAV19W, BAV20W, BAV21W www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diodes For general purpose AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified click logo to get started Material categorization: for definitions of compliance DESIGN SUPPORT TOOLS please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 m tape), 15K/box PARTS TABLE TYPE TYPE CIRCUIT PART ORDERING CODE REMARKS DIFFERENTIATION MARKING CONFIGURATION BAV19W-E3-08 or BAV19W-E3-18 BAV19W V = 100 V A8 Single Tape and reel R BAV19W-HE3-08 or BAV19W-HE3-18 BAV20W-E3-08 or BAV20W-E3-18 BAV20W V = 150 V A9 Single Tape and reel R BAV20W-HE3-08 or BAV20W-HE3-18 BAV21W-E3-08 or BAV21W-E3-18 BAV21W V = 200 V AA Single Tape and reel R BAV21W-HE3-08 or BAV21W-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV19W V 100 V R Continuous reverse voltage BAV20W V 150 V R BAV21W V 200 V R BAV19W V 120 V RRM Repetitive peak reverse voltage BAV20W V 200 V RRM BAV21W V 250 V RRM (1) DC Forward current I 250 mA F Rectified current (average) half wave I 200 mA F(AV) (1) rectification with resist. load (1) Repetitive peak forward current f 50 Hz, = 180 I 625 mA FRM Surge forward current t < 1 s, T = 25 C I 1A j FSM (1) Power dissipation P 410 mW tot Rev. 1.6, 23-Feb-18 Document Number: 85725 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV19W, BAV20W, BAV21W www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 375 C/W thJA (1) Junction temperature T 150 C j (1) Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided that leads are kept at ambient temperature ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 100 mA V 1V F F Forward voltage I = 200 mA V 1.25 V F F V = 100 V BAV19W I 100 nA R R V = 100 V, T = 100 C BAV19W I 15 A R j R V = 150 V BAV20W I 100 nA R R Leakage current V = 150 V, T = 100 C BAV20W I 15 A R j R V = 200 V BAV21W I 100 nA R R V = 200 V, T = 100 C BAV21W I 15 A R j R Dynamic forward I = 10 mA r 5 F f resistance Diode capacitance V = 0, f = 1 MHz C 1.5 pF R D I = 30 mA, I = 30 mA, F R Reverse recovery time t 50 ns rr i = 3 mA, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 0.3 T = 100 C j 100 0.2 DC current I 10 25 C F Current (rectif.) I O 1 0.1 0.1 0.01 0 0 0.2 0.4 0.6 0.8 1 0 30 60 90 120 150 18858 V - Forward Voltage (V) 18859 T - Ambient Temperature (C) F amb Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Admissible Forward Current vs. Ambient Temperature Rev. 1.6, 23-Feb-18 Document Number: 85725 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F I , I - Admissible Forward Current (A) OF