BAV201-GS08 Vishay

333 3 BAV200, BAV201, BAV202, BAV203 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diodes Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS General purposes ADDITIONAL RESOURCES 3D Models MECHANICAL DATA Case: QuadroMELF (SOD-80) Weight: approx. 34 mg Cathode band color: black Packaging codes / options: GS18/10K per 13 reel (8 mm tape), 10K/box GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE TYPE TYPE CIRCUIT PART ORDERING CODE REMARKS DIFFERENTIATION MARKING CONFIGURATION BAV200 V = 60 V BAV200-GS18 or BAV200-GS08 - Single Tape and reel RRM BAV201 V = 120 V BAV201-GS18 or BAV201-GS08 - Single Tape and reel RRM BAV202 V = 200 V BAV202-GS18 or BAV202-GS08 - Single Tape and reel RRM BAV203 V = 250 V BAV203-GS18 or BAV203-GS08 - Single Tape and reel RRM ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV200 V 60 V RRM BAV201 V 120 V RRM Repetitive peak reverse voltage BAV202 V 200 V RRM BAV203 V 250 V RRM BAV200 V 50 V R BAV201 V 100 V R Reverse voltage BAV202 V 150 V R BAV203 V 200 V R Forward continuous current I 250 mA F Peak forward surge current t = 1 s, T = 25 C I 1A p j FSM Repetitive peak forward current f = 50 Hz I 625 mA FRM Power dissipation P 500 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Thermal resistance junction to ambient air R 500 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 1.9, 24-Feb-2020 Document Number: 85544 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D BAV200, BAV201, BAV202, BAV203 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA V 1V F F V = 50 V BAV200 I 100 nA R R V = 100 V BAV201 I 100 nA R R V = 150 V BAV202 I 100 nA R R V = 200 V BAV203 I 100 nA R R Reverse current T = 100 C, V = 50 V BAV200 I 15 A j R R T = 100 C, V = 100 V BAV201 I 15 A j R R T = 100 C, V = 150 V BAV202 I 15 A j R R T = 100 C, V = 200 V BAV203 I 15 A j R R BAV200 V 60 V (BR) BAV201 V 120 V I = 100 A, t /T = 0.01, (BR) R p Breakdown voltage t = 0.3 ms BAV202 V 200 V p (BR) BAV203 V 250 V (BR) Diode capacitance V = 0, f = 1 MHz C 1.5 pF R D Differential forward resistance I = 10 mA r 5 F f I = I = 30 mA, i = 3 mA, F R R Reverse recovery time t 50 ns rr R = 100 L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 100 100 Scattering Limit 10 T = 25 C j 1 10 V = V R RRM 0.1 0.01 1 0 40 80 120 160 200 0.1 1 10 100 94 9084 T - Junction Temperature (C) 94 9089 I - Forward Current (mA) j F Fig. 1 - Reverse Current vs. Junction Temperature Fig. 3 - Differential Forward Resistance vs. Forward Current 1000 T = 25 C j 100 Scattering Limit 10 1 0.1 2.0 0 0.4 0.8 1.2 1.6 94 9085 V - Forward Voltage (V) F Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.9, 24-Feb-2020 Document Number: 85544 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) I - Forward Current (mA) R F r - Differential Forward Resistance () f