X-On Electronics has gained recognition as a prominent supplier of BAV20W RH Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAV20W RH Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAV20W RH Taiwan Semiconductor

BAV20W RH electronic component of Taiwan Semiconductor
BAV20W RH Taiwan Semiconductor
BAV20W RH Diodes - General Purpose, Power, Switching
BAV20W RH  Semiconductors

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See Product Specifications
Part No. BAV20W RH
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Taiwan Semiconductor Diodes - General Purpose, Power, Switching SMALL SIGNAL SWCH 250V 400mW DIODE
Datasheet: BAV20W RH Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2425 ea
Line Total: USD 0.24 
Availability - 4163
Ship by Tue. 29 Apr to Thu. 01 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4163
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 1
Multiples : 1
1 : USD 0.2425
10 : USD 0.1662
100 : USD 0.1008
500 : USD 0.0598
1000 : USD 0.0418
3000 : USD 0.0363
6000 : USD 0.0319
9000 : USD 0.0286
24000 : USD 0.0253

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
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Package / Case
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Brand
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAV20W RH from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV20W RH and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAV19W/BAV20W/BAV21W Taiwan Semiconductor Small Signal Product 410mW High Voltage SMD Switching Diode FEATURES - These diodes are also available in DO-35, LL34 Package - Surface Mount Device Type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix means green compound (halogen-free) SOD-123F MECHANICAL DATA - Case: Flat lead SOD-123F small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s - Polarity: Indicated by cathode band - Weight: 4.85 0.5mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power Dissipation P 410 mW D Repetitive Peak Reverse Voltage V 250 V RRM Repetitive Peak Forward Current I 625 mA FRM Mean Forward Current I 200 mA O Pulse Width = 1 s 4 Non-Repetitive Peak Forward I A FSM Surge Current Pulse Width = 1 s 1 o Thermal Resistance (Junction to Ambient) R 375 JA C/W o Junction and Storage Temperature Range T , T -65 to +150 J STG C PARAMETER MIN MAX SYMBOL UNIT BAV19W 120 - Reverse Breakdown Voltage V BAV20W 200 - V (BR) (Note 1) BAV21W 250 - I = 100 mA - 1 F V Forward Voltage V F I = 200 mA - 1.25 F BAV19W Reverse Leakage Current I BAV20W - 100 nA R (Note 2) BAV21W V = 0 , f = 1.0 MHz Junction Capacitance C - 5 pF R J t 50 Reverse Recovery Time (Note 3) - ns rr Note 1 : Test condition : I = 100A R Note 2 : Test condition : BAV19W V =100V, BAV20W V =150V, BAV21W V =200V R R R Note 3 : Test condition : I = I = 30mA , R =100 , Irr=3mA F R L Document Number: DS S1501003 Version: E15BAV19W/BAV20W/BAV21W Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 1 Admissible Power Dissipation Curve Fig. 2 Typicla Forward Characteristics 300 1000 250 100 200 10 150 1 100 0. 1 50 0 0. 01 0 25 50 75 100 125 150 01 2 o Ambient Temperature ( C) Forward Voltage (V) Fig. 3 Leakage Current VS. Fig. 3 Junction Temperature 100 10 1 0. 1 0. 01 0 100 200 o Junction Temperature ( C) Document Number: DS S1501003 Version: E15 Leakage Current (uA) Power Dissipation (mW) Forward Current (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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