X-On Electronics has gained recognition as a prominent supplier of BAV21W RHG Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAV21W RHG Diodes - General Purpose, Power, Switching are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAV21W RHG Taiwan Semiconductor

BAV21W RHG electronic component of Taiwan Semiconductor
BAV21W RHG Taiwan Semiconductor
BAV21W RHG Diodes - General Purpose, Power, Switching
BAV21W RHG  Semiconductors

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See Product Specifications
Part No. BAV21W RHG
Manufacturer: Taiwan Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching SMALL SIGNAL SWCH 250V 200mW DIODE
Datasheet: BAV21W RHG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2012 ea
Line Total: USD 0.2 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 01 May to Wed. 07 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.0376
6000 : USD 0.0364
9000 : USD 0.036
12000 : USD 0.0344
15000 : USD 0.034
24000 : USD 0.0335
30000 : USD 0.0332
75000 : USD 0.0329
150000 : USD 0.0325

0
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 1
Multiples : 1
1 : USD 0.2012
10 : USD 0.1213
100 : USD 0.065
1000 : USD 0.0484
3000 : USD 0.0396
6000 : USD 0.0352
9000 : USD 0.0286
24000 : USD 0.0253

0
Ship by Tue. 29 Apr to Thu. 01 May
MOQ : 10
Multiples : 5
10 : USD 0.0927
100 : USD 0.0709
250 : USD 0.0564
365 : USD 0.0507
1000 : USD 0.0478

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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We are delighted to provide the BAV21W RHG from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV21W RHG and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAV19W/BAV20W/BAV21W Taiwan Semiconductor Small Signal Product 410mW High Voltage SMD Switching Diode FEATURES - These diodes are also available in DO-35, LL34 Package - Surface Mount Device Type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with Nickel (Ni) underplate - Pb free version and RoHS compliant - Packing code with suffix means green compound (halogen-free) SOD-123F MECHANICAL DATA - Case: Flat lead SOD-123F small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s - Polarity: Indicated by cathode band - Weight: 4.85 0.5mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power Dissipation P 410 mW D Repetitive Peak Reverse Voltage V 250 V RRM Repetitive Peak Forward Current I 625 mA FRM Mean Forward Current I 200 mA O Pulse Width = 1 s 4 Non-Repetitive Peak Forward I A FSM Surge Current Pulse Width = 1 s 1 o Thermal Resistance (Junction to Ambient) R 375 JA C/W o Junction and Storage Temperature Range T , T -65 to +150 J STG C PARAMETER MIN MAX SYMBOL UNIT BAV19W 120 - Reverse Breakdown Voltage V BAV20W 200 - V (BR) (Note 1) BAV21W 250 - I = 100 mA - 1 F V Forward Voltage V F I = 200 mA - 1.25 F BAV19W Reverse Leakage Current I BAV20W - 100 nA R (Note 2) BAV21W V = 0 , f = 1.0 MHz Junction Capacitance C - 5 pF R J t 50 Reverse Recovery Time (Note 3) - ns rr Note 1 : Test condition : I = 100A R Note 2 : Test condition : BAV19W V =100V, BAV20W V =150V, BAV21W V =200V R R R Note 3 : Test condition : I = I = 30mA , R =100 , Irr=3mA F R L Document Number: DS S1501003 Version: E15BAV19W/BAV20W/BAV21W Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig. 1 Admissible Power Dissipation Curve Fig. 2 Typicla Forward Characteristics 300 1000 250 100 200 10 150 1 100 0. 1 50 0 0. 01 0 25 50 75 100 125 150 01 2 o Ambient Temperature ( C) Forward Voltage (V) Fig. 3 Leakage Current VS. Fig. 3 Junction Temperature 100 10 1 0. 1 0. 01 0 100 200 o Junction Temperature ( C) Document Number: DS S1501003 Version: E15 Leakage Current (uA) Power Dissipation (mW) Forward Current (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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