BAV99W Taiwan Semiconductor 150mA, 85V Switching Diode FEATURES KEY PARAMETERS Fast switching device (t < 4ns) rr PARAMETER VALUE UNIT Moisture sensitivity level: level 1, per J-STD-020 I 150 mA F RoHS Compliant V 85 V RRM Halogen-free according to IEC 61249-2-21 I 4 A FSM T 150 C J MAX APPLICATIONS For switching power supply Package SOT-323 MECHANICAL DATA Case: SOT-323 Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 5.00mg (approximately) SOT-323 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Repetitive peak reverse voltage V 85 V RRM Reverse voltage V 75 V R Single diode 150 mA Forward current I F Dual diodes 130 mA Power dissipation P 200 mW D t = 1s 4 A Non-Repetitive peak forward surge t = 1ms I 1 A FSM current t = 1s 0.5 A Repetitive peak forward current I 500 mA FRM Junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG 1 Version: C2102 BAV99W Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 625 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 1mA, T = 25C - 0.715 V F J I = 10mA, T = 25C - 0.855 V F J (1) Forward voltage per diode V F I = 50mA, T = 25C - 1.000 V F J I = 150mA, T = 25C - 1.250 V F J V = 25 V, T = 25C - 30 nA R J V = 75 V, T = 25C - 1 A R J (2) Reverse current per diode I R V = 25 V, T = 150C - 30 A R J V = 75 V, T = 150C - 50 A R J Junction capacitance V = 0V, f = 1.0MHz C - 1.5 pF R J I = I = 10mA, R = 100, F R L Reverse Recovery Time t - 4 ns rr I = 1mA rr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING AND MARKING INFORMATION (1) ORDERING CODE MARKING PACKAGE PACKING BAV99W RF A7 SOT-323 3K / 7 Reel BAV99W RFG A7 SOT-323 3K / 7 Reel Notes: 1. G means green compound (halogen free) 2 Version: C2102