BC337-16/25/40 thru BC338-16/25/40 Taiwan Semiconductor Small Signal Product NPN Transistor FEATURES - For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture sensitivity level 1 - Driver transistor - Pb free and RoHS complian - Green compound (Halogen free) with suffix on packing code and prefix on date code MECHANICAL DATA - Case: TO-92 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s TO-92 - Weight: 190 mg (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Total Power dissipation P 625 mW TOT BC337 50 Collector-Base Voltage V V CBO BC338 30 BC337 45 V Collector-Emitter Voltage V CEO BC338 25 BC337 5 V Emitter-Base Voltage V EBO BC338 5 I Collector Current 800 mA C Peak Collector Current I 1000 mA CM Junction and Storage Temperature Range T , T -55 to +150 C J STG PARAMETER SYMBOL MIN MAX UNIT BC337 50 Collector-Base Breakdown Voltage I = 100A V - V C (BR)CBO BC338 30 BC337 45 I = 2mA V Collector-Emitter Breakdown Voltage - V C (BR)CEO BC338 25 BC337 5 I = 100A V Emitter-Base Breakdown Voltage - V E (BR)EBO BC338 5 BC337 V =50V - 100 Collector Base Cutoff Current CB I nA CBO BC338 V =30V - 100 CB Collector Emitter Saturation Voltage I =500mA, I =50mA V -0.7 V C B CE(sat) V =1V, I =300mA Base Emitter On Voltage V - 1.2 V CE C BE(on) V =5V, I =10mA, CE C Transition Frequency f 100 - MHz T f=50MHz V =10V, f=1MHz Output Capacitance C 12 - pF CB ob Current Gain Group: -16 100 250 V = 5V, CE -25 160 400 I = 100mA C h DC Current Gain -40 250 630 V FE V = 5V, CE 60 - I = 300mA C Document Number: DS S1407004 Version: B14BC337-16/25/40 thru BC338-16/25/40 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25 unless otherwise noted) A FIG.1 STATIC CHARACTERSTIC FIG.2 STATIC CHARACTERSTIC 1000 1000 10 9 COMMON EMITTER COMMON EMITTER 800 800 8 Ta=25 Ta=25 7 6 600 600 5 4 3 400 400 2 I =1mA V =1V B CE 200 200 0 0 0 0 1020 3040 0. 8 0. 6 0. 4 0. 2 0 V (V), COLLECTOR EMITTER VOLTAGE CE BASE CURRENT I (mA) B FIG.3 STATIC CHARACTERSTIC FIG. 4 h -I FE C 1000 0 COMMON EMITTER V =1V CE COMMON EMITTER 0. 2 Ta=25 Ta= 100 0. 4 100 Ta= 25 0. 6 V =1V CE 0. 8 Ta= -25 1 10 0. 8 0. 6 0. 4 0. 2 0 1 10 100 1000 Ic(mA), COLLECTOR CURRENT BASE CURRENT I (mA) B FIG.5 IC - VCE(LOW VOLTAGE REGION) FIG. 6 V (sat) - I CE C 1 1200 COMMON EMITTER COMMON EMITTER I / I = 25 C B V =1V 1000 CE 6 7 8 Ta= 100 Ta= -25 800 5 Ta= 25 600 0. 1 4 3 400 2 I =1mA 200 B Ta= 100 0 0 0. 01 0 12345 6 1 10 100 1000 V (V), COLLECTOR EMITTER VOLTAGE CE Ic(mA), COLLECTOR CURRENT Version: B14 Document Number: DS S1407004 BASE-EMITTER VOLTAGE V (V) BE Ic(mA), COLLECTOR CURRENT Ic(mA), COLLECTOR CURRENT DC CURRENT GAIN h Ic(mA), COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION FE VOLTAGE V (V) CE(sat)