X-On Electronics has gained recognition as a prominent supplier of BAW56 RF Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. BAW56 RF Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

BAW56 RF Taiwan Semiconductor

BAW56 RF electronic component of Taiwan Semiconductor
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Part No.BAW56 RF
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Diode Switching 70V 0.2A 3-Pin SOT-23 T/R
Datasheet: BAW56 RF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.0218 ea
Line Total: USD 130.8 
Availability - 0
MOQ: 6000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 6000
Multiples : 3000
6000 : USD 0.0218

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temp Range
Package Type
Pin Count
Operating Temperature Classification
Rad Hardened
Rectifier Type
Peak Non-Repetitive Surge Current
Peak Rep Rev Volt
Rev Curr
Rev Recov Time
Avg Forward Curr Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BAW56 RF from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAW56 RF and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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BAW56, BAV70, BAV99 Taiwan Semiconductor Small Signal Product 225mW SMD Switching Diode FEATURES - Fast switching speed - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS compliant - Green compound (Halogen free) with suffix on packing code and prefix on date code MECHANICAL DATA - Case: SOT-23 small outline plastic package SOT-23 - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed o - High temperature soldering guaranteed: 260 C/10s - Weight: 0.008grams (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power dissipation P 225 mW D Peak repetitive reverse voltage V 70 V RRM Repetitive peak forward current I 450 mA FRM Mean forward current I 200 mA O Pulse Width=1 sec 0.5 Non-repetitive peak forward I A FSM surge current Pulse Width=1 sec 2 o Thermal resistance form junction to ambient R 556 JA C/W o T , T Junction and storage temperature range - 55 to + 150 J STG C PARAMETER MIN MAX SYMBOL UNIT I = 100 A Reverse breakdown voltage V 70 - V R (BR) I = 50 mA - 1.00 F Forward voltage V V F I = 150 mA - 1.25 F V = 70 V Reverse leakage current I - 2.50 A R R BAW56, BAV70 - 2 V = 0 V, pF R Junction capacitance C J f = 1 MHz BAV99 - 1.5 pF Reverse revovery time I = I = 10 mA, R = 100 , I = 1 mA t - 6 ns F R L RR rr Version: H14 Document Number: DS S1404011BAW56, BAV70, BAV99 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig. 2 Leakage Current VS. Junction Temperature Fig. 1 Typucal Forward Characteristics 10000 1000 V =20V R Typical 100 1000 10 100 1 10 0.1 0.01 1 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 0 20 40 60 80 100 120 140 160 180 200 o Instantaneous Forward Voltage(V) Junction Temperature ( C) Fig. 3 Power Dissipation Derating Curve 250 200 150 100 50 0 0 25 50 75 100 125 150 o Ambient Temperature ( C) Version: H14 Document Number: DS S1404011 Instantaneous Forward Current (mA) Power Dissipation (mW) REVERSE CURRENT (nA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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