VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3) www.vishay.com Vishay Semiconductors Schottky Rectifier, 5 A FEATURES 175 C T operation J Low forward voltage drop Cathode Anode High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength DO-204AR and moisture resistance Guard ring for enhanced ruggedness and long term reliability Designed and qualified for commercial level PRODUCT SUMMARY Material categorization: For definitions of compliance Package DO-204AR please see www.vishay.com/doc 99912 I 5 A F(AV) V 60 V, 80 V, 100 V R DESCRIPTION V at I 0.52 V F F The VS-50SQ... axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. I max. 7.0 mA at 125 C RM The proprietary barrier technology allows for reliable T max. 175 C J operation up to 175 C junction temperature. Typical Diode variation Single die applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. E 7.5 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 5 A F(AV) V Range 60 to 100 V RRM I t = 5 s sine 1900 A FSM p V 5 Apk, T = 125 C 0.52 V F J T Range - 55 to 175 C J VOLTAGE RATINGS VS-50SQ060 VS-50SQ080 VS-50SQ100 PARAMETER SYMBOL UNITS VS-50SQ060-M3 VS-50SQ080-M3 VS-50SQ100-M3 Maximum DC reverse voltage V R 60 80 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 119 C, rectangular waveform 5 F(AV) C See fig. 5 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 1900 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 290 See fig. 7 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1.0 A, L = 15 mH 7.5 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by, T maximum V = 1.5 x V typical J A R Revision: 19-Sep-11 Document Number: 93355 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3) www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 5 A 0.66 T = 25 C J 10 A 0.77 Maximum forward voltage drop (1) V V FM See fig. 1 5 A 0.52 T = 125 C J 10 A 0.62 T = 25 C 0.55 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 7 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 500 pF T R DC Typical series inductance L Measured lead to lead 5 mm from body 10 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range Maximum thermal resistance, DC operation see fig. 4 R 8.0 thJL junction to lead 1/8 lead length C/W Typical thermal resistance, R 44 thJA junction to air 1.4 g Approximate weight 0.049 oz. 50SQ060 Marking device Case style DO-204AR (JEDEC) 50SQ080 50SQ100 Revision: 19-Sep-11 Document Number: 93355 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000