X-On Electronics has gained recognition as a prominent supplier of BC546A A1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC546A A1G Bipolar Transistors - BJT are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC546A A1G Taiwan Semiconductor

BC546A A1G electronic component of Taiwan Semiconductor
BC546A A1G Taiwan Semiconductor
BC546A A1G Bipolar Transistors - BJT
BC546A A1G  Semiconductors

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See Product Specifications
Part No. BC546A A1G
Manufacturer: Taiwan Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TO-92 80V 0.1A NPN Bipolar Transistor
Datasheet: BC546A A1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3587 ea
Line Total: USD 0.36 
Availability - 1432
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1432
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.3587
10 : USD 0.245
100 : USD 0.1488
500 : USD 0.0847
1000 : USD 0.0616
2000 : USD 0.0539
4000 : USD 0.0484
8000 : USD 0.0385
24000 : USD 0.0374

   
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RoHS - XON
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We are delighted to provide the BC546A A1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC546A A1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement V 30-80 V CBO High surge current capability V 30-65 V CEO Compliant to RoHS directive 2011/65/EU and V 6 V in accordance to WEEE 2002/96/EC EBO Halogen-free according to IEC 61249-2-21 I 100 mA C h 220-800 FE APPLICATIONS Package TO-92 Switching mode power supply (SMPS) Configuration Single Dice Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: TO-92 Molding compound meets UL 94 V-0 flammability rating Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8mg (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BC8xxA/B/C Marking code on the device (Note 1) Power dissipation P 500 D mW Notes: 1.x is device code from46 to50 ,MARKIN should follow thePART NO 1 Version:C1703 BC546A/B/C - BC550A/B/C Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT BC546 80 Collector-base voltage, emitter open BC547,BC550 V 50 V CBO BC548,BC549 30 BC546 65 Collector-emitter voltage, base open BC547,BC550 V 45 V CEO BC548,BC549 30 BC546 6 Emitter-base voltage, collector open BC547,BC550 V 6 V EBO BC548,BC549 6 Collector current I 100 C mA Peak collector current I 200 mA CM T -65 to +150 Junction temperature J C T -65 to +150 Storage temperature C STG ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Collector cutoff current, emitter V = 30 V I - - 15 nA CB CBO open Emitter cutoff - - 100 current, V = 5 V I nA EB EBO collector open BC546 80 - - Collector-base BC547,BC550 V 50 - - voltage, I = 100 A CBO V C emitter open BC548,BC549 30 - - BC546 65 - - Collector- BC547,BC550 V 45 - - V emitter voltage, I = 10 mA CEO C base open BC548,BC549 30 - - BC546 6 - - Emitter-base BC547,BC550 V 6 - - V voltage, I = 100 A EBO E collector open BC548,BC549 6 - - Current gain group :A 110 - 220 DC current V = 5 V, CE B 200 - 450 h FE gain I = 2 mA C C 420 - 800 2 Version:C1703

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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