BAV19WS-G, BAV20WS-G, BAV21WS-G www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diodes For general purpose AEC-Q101 qualified Base P/N-G3 - green, commercial grade Base P/N-HG3 - green, AEC-Q101 qualified (part number available on request) DESIGN SUPPORT TOOLS click logo to get started Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Models Available MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE TYPE TYPE CIRCUIT PART ORDERING CODE REMARKS DIFFERENTIATION MARKING CONFIGURATION BAV19WS-G V = 100 V BAV19WS-G3-08 or BAV19WS-G3-18 AS Single Tape and reel R BAV20WS-G V = 150 V BAV20WS-G3-08 or BAV20WS-G3-18 AT Single Tape and reel R BAV21WS-G V = 200 V BAV21WS-G3-08 or BAV21WS-G3-18 AU Single Tape and reel R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL SYMBOL VALUE UNIT BAV19WS-G V 100 V R Continuous reverse voltage BAV20WS-G V 150 V R BAV21WS-G V 200 V R BAV19WS-G V 120 V RRM Repetitive peak reverse voltage BAV20WS-G V 200 V RRM BAV21WS-G V 250 V RRM (1) Forward continuous current I 250 mA F Rectified current (average) half wave I 200 mA F(AV) (1) rectification with resistive load (1) Repetitive peak forward current f 50 Hz, = 180 I 625 mA FRM Surge forward current t < 1 s, T = 25 C I 1A J FSM Power dissipation P 200 mW tot Note (1) Valid provided that leads are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air R 625 K/W thJA Thermal resistance junction to lead R 450 K/W thJL Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Rev. 1.7, 12-Jul-17 Document Number: 83423 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAV19WS-G, BAV20WS-G, BAV21WS-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 100 mA V 1V F F Forward voltage I = 200 mA V 1.25 V F F V = 100 V BAV19WS-G I 100 nA R R V = 100 V, T = 100 C BAV19WS-G I 15 A R j R V = 150 V BAV20WS-G I 100 nA R R Reverse leakage current V = 150 V, T = 100 C BAV20WS-G I 15 A R j R V = 200 V BAV21WS-G I 100 nA R R V = 200 V, T = 100 C BAV21WS-G I 15 A R j R Dynamic Forward resistance I = 10 mA r 5 F f Diode capacitance V = 0 V, f = 1 MHz C 1.5 pF R D I = 30 mA, I = 30 mA, F R Reverse recovery time t 50 ns rr i = 3 mA, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 250 T = 100 C j 100 200 10 150 25 C 1 100 50 0.1 0.01 0 0 0.2 0.4 0.6 0.8 1 0 20 40 60 80 100 120 140 160 180 200 18858 V - Forward Voltage (V) 18864 T - Ambient Temperature (C) F amb Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 0.3 100 0.2 DC current I F 10 Current (rectif.) I O 0.1 0 1 1 10 100 0 30 60 90 120 150 18861 I - Forward Current (mA) 18859 T - Ambient Temperature (C) F amb Fig. 2 - Admissible Forward Current vs. Ambient Temperature Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 1.7, 12-Jul-17 Document Number: 83423 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I , I - Admissible Forward Current (A) I - Forward Current (mA) OF F P - Admissible Power Dissipation (mW) r - Dynamic Forward Resistance () tot f