BAV19W-V, BAV20W-V, BAV21W-V www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diodes For general purpose These diodes are also available in other case styles including: the DO-35 case with the type designations BAV19 to BAV21, the MiniMELF case with the type designations BAV100 to BAV103, the SOT-23 case with the type designations BAS19 to BAS21, and the SOD-323 case with type designations BAV19WS-V to BAV21WS-V MECHANICAL DATA AEC-Q101 qualified Case: SOD-123 Material categorization: For definitions of compliance Weight: approx. 10.3 mg please see www.vishay.com/doc 99912 Packaging codes/options: GS18/10K per 13 reel (8 mm tape), 10K/box GS08/3K per 7 reel (8 m tape), 15K/box PARTS TABLE TYPE TYPE INTERNAL PART ORDERING CODE REMARKS DIFFERENTIATION MARKING CONSTRUCTION BAV19W-V V = 100 V BAV19W-V-GS18 or BAV19W-V-GS08 A8 Single diode Tape and reel R BAV20W-V V = 150 V BAV20W-V-GS18 or BAV20W-V-GS08 A9 Single diode Tape and reel R BAV21W-V V = 200 V BAV21W-V-GS18 or BAV21W-V-GS08 AA Single diode Tape and reel R ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV19W-V V 100 V R Continuous reverse voltage BAV20W-V V 150 V R BAV21W-V V 200 V R BAV19W-V V 120 V RRM Repetitive peak reverse voltage BAV20W-V V 200 V RRM BAV21W-V V 250 V RRM (1) DC Forward current I 250 mA F Rectified current (average) half wave I 200 mA F(AV) (1) rectification with resist. load (1) Repetitive peak forward current f 50Hz, = 180 I 625 mA FRM Surge forward current t < 1 s, T = 25 C I 1A j FSM (1) Power dissipation P 410 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 375 C/W thJA (1) Junction temperature T 150 C j (1) Storage temperature range T - 65 to + 150 C stg Note (1) Valid provided that leads are kept at ambient temperature Rev. 1.4, 06-Nov-12 Document Number: 85725 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAV19W-V, BAV20W-V, BAV21W-V www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 100 mA V 1V F F Forward voltage I = 200 mA V 1.25 V F F V = 100 V BAV19W-V I 100 nA R R V = 100 V, T = 100 C BAV19W-V I 15 A R j R V = 150 V BAV20W-V I 100 nA R R Leakage current V = 150 V, T = 100 C BAV20W-V I 15 A R j R V = 200 V BAV21W-V I 100 nA R R V = 200 V, T = 100 C BAV21W-V I 15 A R j R Dynamic forward I = 10 mA r 5 F f resistance Diode capacitace V = 0, f = 1 MHz C 1.5 pF R D I = 30 mA, I = 30 mA, F R Reverse recovery time t 50 ns rr i = 3 mA, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 500 T = 100 C j 100 400 10 300 25 C 1 200 100 0.1 0.01 0 0 0.2 0.4 0.6 0.8 1 0 40 80 120 160 200 18858 V - Forward Voltage (V) F T - Ambient Temperature (C) 18860 amb Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 0.3 100 0.2 DC current I F 10 Current (rectif.) I O 0.1 0 1 1 10 100 0 30 60 90 120 150 18861 I - Forward Current (mA) 18859 T - Ambient Temperature (C) F amb Fig. 2 - Admissible Forward Current vs. Ambient Temperature Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 1.4, 06-Nov-12 Document Number: 85725 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I , I - Admissible Forward Current (A) I- Forward Current (mA) OF F P - Admissible Power Dissipation (mW) tot r - Dynamic Forward Resistance () f