X-On Electronics has gained recognition as a prominent supplier of BAV21WS-HE3-08 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAV21WS-HE3-08 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAV21WS-HE3-08 Vishay

Hot BAV21WS-HE3-08 electronic component of Vishay
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Part No.BAV21WS-HE3-08
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Vishay Semiconductors Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM
Datasheet: BAV21WS-HE3-08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4485: USD 0.0319 ea
Line Total: USD 143.07 
Availability - 104760
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 4485  Multiples: 1
Pack Size: 1
Availability Price Quantity
305550
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0482
9000 : USD 0.047
12000 : USD 0.0467
30000 : USD 0.0457
45000 : USD 0.0447

104760
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 4485
Multiples : 1
4485 : USD 0.0319

288
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0859
100 : USD 0.0714
300 : USD 0.0642
3000 : USD 0.0526
6000 : USD 0.0485
9000 : USD 0.0462

54516
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2818
10 : USD 0.1879
100 : USD 0.0805
1000 : USD 0.0725
3000 : USD 0.047
9000 : USD 0.0456
15000 : USD 0.0443

2382
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.224
10 : USD 0.168
20 : USD 0.14
100 : USD 0.0882
323 : USD 0.0532

5087
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 480
Multiples : 1
480 : USD 0.1033
516 : USD 0.0961
1000 : USD 0.0845
2000 : USD 0.0809

407400
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 15000
Multiples : 15000
15000 : USD 0.0473
30000 : USD 0.0398
75000 : USD 0.0395
150000 : USD 0.039

   
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We are delighted to provide the BAV21WS-HE3-08 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV21WS-HE3-08 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAV19WS, BAV20WS, BAV21WS www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diodes For general purpose AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade DESIGN SUPPORT TOOLS click logo to get started Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance Models Available please see www.vishay.com/doc 99912 MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE TYPE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS DIFFERENTIATION CONFIGURATION BAV19WS-E3-08 or BAV19WS-E3-18 BAV19WS V = 100 V A8 Single Tape and reel R BAV19WS-HE3-08 or BAV19WS-HE3-18 BAV20WS-E3-08 or BAV20WS-E3-18 BAV20WS V = 150 V A9 Single Tape and reel R BAV20WS-HE3-08 or BAV20WS-HE3-18 BAV21WS-E3-08 or BAV21WS-E3-18 BAV21WS V = 200 V AA Single Tape and reel R BAV21WS-HE3-08 or BAV21WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV19WS V 100 V R Continuous reverse voltage BAV20WS V 150 V R BAV21WS V 200 V R BAV19WS V 120 V RRM Repetitive peak reverse voltage BAV20WS V 200 V RRM BAV21WS V 250 V RRM (1) Forward continuous current I 250 mA F Rectified current (average) half wave I 200 mA F(AV) (1) rectification with resistive load (1) Repetitive peak forward current f 50 Hz, = 180 I 625 mA FRM Surge forward current t < 1 s, T = 25 C I 1A J FSM Power dissipation P 200 mW tot Note (1) Valid provided that leads are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air R 625 K/W thJA Thermal resistance junction to lead R 450 K/W thJL Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Rev. 2.2, 12-Jul-17 Document Number: 85726 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAV19WS, BAV20WS, BAV21WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 100 mA V 1V F F Forward voltage I = 200 mA V 1.25 V F F V = 100 V BAV19WS I 100 nA R R V = 100 V, T = 100 C BAV19WS I 15 A R J R V = 150 V BAV20WS I 100 nA R R Reverse leakage current V = 150 V, T = 100 C BAV20WS I 15 A R J R V = 200 V BAV21WS I 100 nA R R V = 200 V, T = 100 C BAV21WS I 15 A R J R Dynamic forward resistance I = 10 mA r 5 F f Diode capacitance V = 0, f = 1 MHz C 1.5 pF R D I = 30 mA, I = 30 mA, F R Reverse recovery time t 50 ns rr i = 3 mA, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 250 T = 100 C j 100 200 10 150 25 C 1 100 50 0.1 0.01 0 0 0.2 0.4 0.6 0.8 1 0 20 40 60 80 100 120 140 160 180 200 18858 V - Forward Voltage (V) 18864 T - Ambient Temperature (C) F amb Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 0.3 100 0.2 DC current I F 10 Current (rectif.) I O 0.1 0 1 1 10 100 0 30 60 90 120 150 18861 I - Forward Current (mA) 18859 T - Ambient Temperature (C) F amb Fig. 2 - Admissible Forward Current vs. Ambient Temperature Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 2.2, 12-Jul-17 Document Number: 85726 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I , I - Admissible Forward Current (A) I - Forward Current (mA) OF F P - Admissible Power Dissipation (mW) r - Dynamic Forward Resistance () tot f

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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