X-On Electronics has gained recognition as a prominent supplier of BAV21WS-HE3-08 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAV21WS-HE3-08 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAV21WS-HE3-08 Vishay

BAV21WS-HE3-08 electronic component of Vishay
BAV21WS-HE3-08 Vishay
BAV21WS-HE3-08 Diodes - General Purpose, Power, Switching
BAV21WS-HE3-08  Semiconductors

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Part No. BAV21WS-HE3-08
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Vishay Semiconductors Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM
Datasheet: BAV21WS-HE3-08 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0353 ea
Line Total: USD 105.9 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
271
Ship by Thu. 17 Apr to Tue. 22 Apr
MOQ : 10
Multiples : 10
10 : USD 0.1197
100 : USD 0.0973
300 : USD 0.0738
3000 : USD 0.0539
6000 : USD 0.0486
9000 : USD 0.0462

48773
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ : 1
Multiples : 1
1 : USD 0.18
10 : USD 0.1238
100 : USD 0.0756
500 : USD 0.0621
1000 : USD 0.055
2500 : USD 0.044
5000 : USD 0.0396
10000 : USD 0.0341
15000 : USD 0.033

2372
Ship by Tue. 08 Apr to Thu. 10 Apr
MOQ : 1
Multiples : 1
1 : USD 0.168
10 : USD 0.1456
20 : USD 0.1218
100 : USD 0.0728
323 : USD 0.056

5087
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 1092
Multiples : 1
1092 : USD 0.0736
2000 : USD 0.0697

785700
Ship by Thu. 10 Apr to Wed. 16 Apr
MOQ : 15000
Multiples : 15000
15000 : USD 0.0556

   
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We are delighted to provide the BAV21WS-HE3-08 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV21WS-HE3-08 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAV19WS, BAV20WS, BAV21WS www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diodes For general purpose AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade DESIGN SUPPORT TOOLS click logo to get started Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance Models Available please see www.vishay.com/doc 99912 MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE TYPE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS DIFFERENTIATION CONFIGURATION BAV19WS-E3-08 or BAV19WS-E3-18 BAV19WS V = 100 V A8 Single Tape and reel R BAV19WS-HE3-08 or BAV19WS-HE3-18 BAV20WS-E3-08 or BAV20WS-E3-18 BAV20WS V = 150 V A9 Single Tape and reel R BAV20WS-HE3-08 or BAV20WS-HE3-18 BAV21WS-E3-08 or BAV21WS-E3-18 BAV21WS V = 200 V AA Single Tape and reel R BAV21WS-HE3-08 or BAV21WS-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV19WS V 100 V R Continuous reverse voltage BAV20WS V 150 V R BAV21WS V 200 V R BAV19WS V 120 V RRM Repetitive peak reverse voltage BAV20WS V 200 V RRM BAV21WS V 250 V RRM (1) Forward continuous current I 250 mA F Rectified current (average) half wave I 200 mA F(AV) (1) rectification with resistive load (1) Repetitive peak forward current f 50 Hz, = 180 I 625 mA FRM Surge forward current t < 1 s, T = 25 C I 1A J FSM Power dissipation P 200 mW tot Note (1) Valid provided that leads are kept at ambient temperature THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air R 625 K/W thJA Thermal resistance junction to lead R 450 K/W thJL Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Rev. 2.2, 12-Jul-17 Document Number: 85726 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BAV19WS, BAV20WS, BAV21WS www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT I = 100 mA V 1V F F Forward voltage I = 200 mA V 1.25 V F F V = 100 V BAV19WS I 100 nA R R V = 100 V, T = 100 C BAV19WS I 15 A R J R V = 150 V BAV20WS I 100 nA R R Reverse leakage current V = 150 V, T = 100 C BAV20WS I 15 A R J R V = 200 V BAV21WS I 100 nA R R V = 200 V, T = 100 C BAV21WS I 15 A R J R Dynamic forward resistance I = 10 mA r 5 F f Diode capacitance V = 0, f = 1 MHz C 1.5 pF R D I = 30 mA, I = 30 mA, F R Reverse recovery time t 50 ns rr i = 3 mA, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 250 T = 100 C j 100 200 10 150 25 C 1 100 50 0.1 0.01 0 0 0.2 0.4 0.6 0.8 1 0 20 40 60 80 100 120 140 160 180 200 18858 V - Forward Voltage (V) 18864 T - Ambient Temperature (C) F amb Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature 0.3 100 0.2 DC current I F 10 Current (rectif.) I O 0.1 0 1 1 10 100 0 30 60 90 120 150 18861 I - Forward Current (mA) 18859 T - Ambient Temperature (C) F amb Fig. 2 - Admissible Forward Current vs. Ambient Temperature Fig. 4 - Dynamic Forward Resistance vs. Forward Current Rev. 2.2, 12-Jul-17 Document Number: 85726 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I , I - Admissible Forward Current (A) I - Forward Current (mA) OF F P - Admissible Power Dissipation (mW) r - Dynamic Forward Resistance () tot f

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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