X-On Electronics has gained recognition as a prominent supplier of BAV203-GS18 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAV203-GS18 Diodes - General Purpose, Power, Switching are a product manufactured by Vishay. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAV203-GS18 Vishay

BAV203-GS18 electronic component of Vishay
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Part No.BAV203-GS18
Manufacturer: Vishay
Category: Diodes - General Purpose, Power, Switching
Description: Vishay Semiconductors Diodes - General Purpose, Power, Switching 250 Volt 625mA
Datasheet: BAV203-GS18 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1744 ea
Line Total: USD 0.17 
Availability - 8730
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1744
10 : USD 0.1167
100 : USD 0.0563
1000 : USD 0.0469
2500 : USD 0.0403
10000 : USD 0.0336
20000 : USD 0.0309

   
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We are delighted to provide the BAV203-GS18 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAV203-GS18 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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333 3 BAV200, BAV201, BAV202, BAV203 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, High Voltage FEATURES Silicon epitaxial planar diodes Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS General purposes ADDITIONAL RESOURCES 3D Models MECHANICAL DATA Case: QuadroMELF (SOD-80) Weight: approx. 34 mg Cathode band color: black Packaging codes / options: GS18/10K per 13 reel (8 mm tape), 10K/box GS08/2.5K per 7 reel (8 mm tape), 12.5K/box PARTS TABLE TYPE TYPE CIRCUIT PART ORDERING CODE REMARKS DIFFERENTIATION MARKING CONFIGURATION BAV200 V = 60 V BAV200-GS18 or BAV200-GS08 - Single Tape and reel RRM BAV201 V = 120 V BAV201-GS18 or BAV201-GS08 - Single Tape and reel RRM BAV202 V = 200 V BAV202-GS18 or BAV202-GS08 - Single Tape and reel RRM BAV203 V = 250 V BAV203-GS18 or BAV203-GS08 - Single Tape and reel RRM ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BAV200 V 60 V RRM BAV201 V 120 V RRM Repetitive peak reverse voltage BAV202 V 200 V RRM BAV203 V 250 V RRM BAV200 V 50 V R BAV201 V 100 V R Reverse voltage BAV202 V 150 V R BAV203 V 200 V R Forward continuous current I 250 mA F Peak forward surge current t = 1 s, T = 25 C I 1A p j FSM Repetitive peak forward current f = 50 Hz I 625 mA FRM Power dissipation P 500 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT On PC board Thermal resistance junction to ambient air R 500 K/W thJA 50 mm x 50 mm x 1.6 mm Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 1.9, 24-Feb-2020 Document Number: 85544 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D BAV200, BAV201, BAV202, BAV203 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA V 1V F F V = 50 V BAV200 I 100 nA R R V = 100 V BAV201 I 100 nA R R V = 150 V BAV202 I 100 nA R R V = 200 V BAV203 I 100 nA R R Reverse current T = 100 C, V = 50 V BAV200 I 15 A j R R T = 100 C, V = 100 V BAV201 I 15 A j R R T = 100 C, V = 150 V BAV202 I 15 A j R R T = 100 C, V = 200 V BAV203 I 15 A j R R BAV200 V 60 V (BR) BAV201 V 120 V I = 100 A, t /T = 0.01, (BR) R p Breakdown voltage t = 0.3 ms BAV202 V 200 V p (BR) BAV203 V 250 V (BR) Diode capacitance V = 0, f = 1 MHz C 1.5 pF R D Differential forward resistance I = 10 mA r 5 F f I = I = 30 mA, i = 3 mA, F R R Reverse recovery time t 50 ns rr R = 100 L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1000 100 100 Scattering Limit 10 T = 25 C j 1 10 V = V R RRM 0.1 0.01 1 0 40 80 120 160 200 0.1 1 10 100 94 9084 T - Junction Temperature (C) 94 9089 I - Forward Current (mA) j F Fig. 1 - Reverse Current vs. Junction Temperature Fig. 3 - Differential Forward Resistance vs. Forward Current 1000 T = 25 C j 100 Scattering Limit 10 1 0.1 2.0 0 0.4 0.8 1.2 1.6 94 9085 V - Forward Voltage (V) F Fig. 2 - Forward Current vs. Forward Voltage Rev. 1.9, 24-Feb-2020 Document Number: 85544 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) I - Forward Current (mA) R F r - Differential Forward Resistance () f

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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