BC846 BC847 BC848 NPN Silicon Planar Epitaxial Transistors Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit: inch (mm) SOT-23 SMD Package o Absolute Maximum Ratings (Ta = 25 C unless specified otherwise) SYMBOL BC846 BC847 BC848 UNITS DESCRIPTION Collector Base Voltage V 80 50 30 V CBO Collector Emmitter Voltage (V = 0V) V 80 50 30 V BE CES Collector Emitter Voltage V 65 45 30 V CEO V 66 5 V EBO Emitter Base Voltage I 100 Collector Current (DC) C mA I 200 CM Collector Current - Peak -I 200 mA Emitter Current - Peak EM I 200 mA BM Base Current - Peak Total power dissipation up to P ** 250 mW tot o T = 25 C amb o Tstg -55 to +150 Storge Temperature C o Tj 150 C Junction Temperature Thermal Resistance From junction to ambient R 500 K/W th(j-a)** **Mounted on a ceramic substrate of 8mm x 10mm x 0.7mm www.rectron.com 1 of 2BC846 BC847 BC848 o Electrical Characteristics (at Ta=25 C unless otherwise specified) SYMBOL TEST CONDITION TYP UNITS DESCRIPTION MIN MAX Collector Cut Off Current V = 30V, I = 0 nA CB E 15 I CBO o V = 30V, I = 0, Tj = 150 C 4 uA CB E Base Emitter On Voltage I = 2mA, V = 5V C CE 0.58 0.7 V * V BE(on) I = 10mA, V = 5V 0.77 C CE Collector Emitter Saturation Voltage I = 10mA, I = 0.5mA C B 0.25 V V CE(Sat) I = 100mA, I = 5mA 0.60 C B I = 10mA, I = 0.5mA Base Emitter Saturation Voltage C B 0.7 V *** V BE(Sat) I = 100mA, I = 5mA 0.9 C B h DC Current Gain FE I = 10uA, V = 5V C CE BC846A/BC847A/BC848A 90 BC846B/BC847B/BC848B 150 BC847C/BC848C 270 I = 2mA, V = 5V C CE BC846 110 450 BC847/BC848 110 800 BC846A/BC847A/BC848A 110 220 BC846B/BC847B/BC848B 200 450 BC847C/BC848C 420 800 I = ie = 0, V = 10V, f = 1MH Collector Capacitance C 2.5 pF C E CB Z f I = 10mA, V = 5V, f = 100MH MH Transition Frequency C CB Z 100 T Z I = 2mA, V = 5V, f= 1kH Small Signal Current Gain h C CE Z fe BC856 125 500 BC857/BC858 125 900 BC846A/BC847A/BC848A 125 260 BC846B/BC847B/BC848B 240 500 BC847C/BC848C 450 900 I = 0.2mA, V = 5V Noise Figure NF 10 dB C CE R = 2k ohm, f = 1KH , B= 200H S Z Z *V decreases by about 2mV/K with increase temperature. BE (on) ***V decreases by about 1.7mV/K with increase temperature. BE (Sat) www.rectron.com 2 of 2