HN1D01F(TE85L,F) Toshiba

HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Unit: mm Ultra High Speed Switching Application HN1D01F is composed of 2 unit of anode common. Low forward voltage : VF (3) = 0.92 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 2.2 pF (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300 (*) mA FM Average forward current I 100 (*) mA O Surge current (10 ms) I 2 (*) A FSM Power dissipation P (Note 3) 300 mW D T (Note 1) 150 j SM6 Junction temperature C T (Note 2) 125 j JEDEC T (Note 1) 55 to 150 stg SC-74 JEITA Storage temperature C TOSHIBA 1-3K1A T (Note 2) 55 to 125 stg Weight: 0.015 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. Note 3: Total rating. (*) These are the Absolute Maximum Ratings for a single diode (Q1 or Q2 or Q3 or Q4). If Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those of a single diode. Electrical Characteristics (Q , Q , Q , Q Common, Ta = 25C) 1 2 3 4 Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.61 F (1) F Forward voltage V I = 10 mA 0.74 V F (2) F V I = 100 mA 0.92 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 2.2 4.0 pF T R Reverse recovery time t I = 10 mA (Fig. 1) 1.6 4.0 ns rr F Start of commercial production 1992-05 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation HN1D01F Pin Assignment (Top View) Marking Fig.1 Reverse Recovery Time (t ) Test Circuit rr 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation