HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) z Small total capacitance Q1, Q2: CT = 0.9pF (typ.) Unit 2 z Low forward voltage Q3, Q4: VF (3) = 0.92V (typ.) z Fast reverse recovery time Q3, Q4: trr = 1.6ns (typ.) z Small total capacitance Q3, Q4: CT = 2.2pF (typ.) Unit 1, Unit 2 Common Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit JEDEC JEITA Maximum (peak) reverse voltage V 85 V RM TOSHIBA 1-2T1D Reverse voltage V 80 V R Weight: 6.2mg (typ.) Maximum (peak) forward current I 300* mA FM Average forward current I 100* mA O Surge current (10ms) I 2* A FSM Power dissipation P 200 mW Junction temperature T 125 C j Storage temperature T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode is 75% of the single diode one. Marking Pin Assignment (Top View) Start of commercial production 1992-05 1 2014-03-01 HN1D03FU Fig.1 Reverse Recovery Time (t ) Test Circuit rr Unit 1 Electrical Characteristics (Q1, Q2 Common) (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.60 F (1) F Forward voltage V I = 10mA 0.72 V F (2) F V I = 100mA 0.90 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MHz 0.9 3.0 pF T R Reverse recovery time t I =10mA (fig.1) 1.6 4.0 ns rr F Unit 2 Electrical Characteristics (Q3, Q4 Common) (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.61 F (1) F Forward voltage V V I = 10mA 0.74 F (2) F V I = 100mA 0.92 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MHz 2.2 4.0 pF T R Reverse recovery time t I =10mA (fig.1) 1.6 4.0 ns rr F 2 2014-03-01