X-On Electronics has gained recognition as a prominent supplier of HN1D03FU(TE85L,F) Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. HN1D03FU(TE85L,F) Diodes - General Purpose, Power, Switching are a product manufactured by Toshiba. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

HN1D03FU(TE85L,F) Toshiba

HN1D03FU(TE85L,F) electronic component of Toshiba
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Part No.HN1D03FU(TE85L,F)
Manufacturer: Toshiba
Category: Diodes - General Purpose, Power, Switching
Description: Diode Switching 85V 0.1A 6-Pin US T/R
Datasheet: HN1D03FU(TE85L,F) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
200: USD 1.6586 ea
Line Total: USD 331.72 
Availability - 0
MOQ: 200  Multiples: 200
Pack Size: 200
Availability Price Quantity
0
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 200
Multiples : 200
200 : USD 1.6586
600 : USD 1.5425
1000 : USD 1.3876
2000 : USD 1.355

   
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Product Category
RoHS - XON
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We are delighted to provide the HN1D03FU(TE85L,F) from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HN1D03FU(TE85L,F) and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.) z Small total capacitance Q1, Q2: CT = 0.9pF (typ.) Unit 2 z Low forward voltage Q3, Q4: VF (3) = 0.92V (typ.) z Fast reverse recovery time Q3, Q4: trr = 1.6ns (typ.) z Small total capacitance Q3, Q4: CT = 2.2pF (typ.) Unit 1, Unit 2 Common Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit JEDEC JEITA Maximum (peak) reverse voltage V 85 V RM TOSHIBA 1-2T1D Reverse voltage V 80 V R Weight: 6.2mg (typ.) Maximum (peak) forward current I 300* mA FM Average forward current I 100* mA O Surge current (10ms) I 2* A FSM Power dissipation P 200 mW Junction temperature T 125 C j Storage temperature T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode is 75% of the single diode one. Marking Pin Assignment (Top View) Start of commercial production 1992-05 1 2014-03-01 HN1D03FU Fig.1 Reverse Recovery Time (t ) Test Circuit rr Unit 1 Electrical Characteristics (Q1, Q2 Common) (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.60 F (1) F Forward voltage V I = 10mA 0.72 V F (2) F V I = 100mA 0.90 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MHz 0.9 3.0 pF T R Reverse recovery time t I =10mA (fig.1) 1.6 4.0 ns rr F Unit 2 Electrical Characteristics (Q3, Q4 Common) (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.61 F (1) F Forward voltage V V I = 10mA 0.74 F (2) F V I = 100mA 0.92 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MHz 2.2 4.0 pF T R Reverse recovery time t I =10mA (fig.1) 1.6 4.0 ns rr F 2 2014-03-01

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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