HN2D03F(TE85L,F) Toshiba

HN2D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN2D03F High-Speed Switching Application Unit: mm z Small package z Low forward voltage : V = 0.94 V (typ.) F (2) z Small total capacitance : C = 2.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 420 V RM Reverse voltage V 400 V R Maximum (peak) forward current I 300* mA FM Average forward current I 100* mA O Surge current (10ms) I 2* A FSM 1.CATHODE(C1) Power dissipation P 300** mW 2.CATHODE(C2) 3.CATHODE(C3) Junction temperature T 150 C j 4.ANODE (A3) 5.ANODE (A2) Storage temperature T 55 to 150 C stg 6.ANODE (A1) JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in 1-3K1C temperature, etc.) may cause this product to decrease in the TOSHIBA reliability significantly even if the operating conditions (i.e. operating Weight: 15 mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Absolute Maximum Ratings per each one of Q1, Q2 or Q3. In case of simultaneous use, the Absolute Maximum Ratings per diode shall be derated to 75%. **: Total rating Electrical Characteristics (Q1, Q2, Q3, Common, Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 10 mA 0.8 F (1) F Forward voltage V V I = 100 mA 0.94 1.3 F (2) F I V = 300 V 0.05 R (1) R Reverse current A I V = 400 V 0.1 R (2) R Total capacitance C V = 0 V, f = 1 MHz 2.5 pF T R I = 10 mA (fig.1) Reverse recovery time t 0.5 s rr F Start of commercial production 2002-04 1 2014-03-01 HN2D03F Fig.1 Reverse Recovery Time (t ) Test Circuit rr 10ns Pin Assignment (top view) Marking 6 5 4 6 5 4 Q3 A7 Q1 Q2 1 2 3 1 2 3 2 2014-03-01