HN1D04FUTE85LF Toshiba

HN1D04FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D04FU Ultra High Speed Switching Application Unit: mm z Low forward voltage : V = 0.90V (typ.) F(3) z Fast reverse recovery time : t = 1.6ns (typ.) rr z Small total capacitance : C = 0.9pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R Maximum (peak) forward current I 300* mA FM Average forward current I 100* mA O 1.ANODE1 2.CATHODE2 Surge current (10ms) I 2* A FSM 3.ANODE4 CATHODE3 Power dissipation P 200** mW 4.ANODE3 5.CATHODE4 Junction temperature T 150 C j 6.CATHODE1 US6 Storage temperature T 55 to 150 C stg ANODE2 JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 1-2T1F reliability significantly even if the operating conditions (i.e. operating Weight: 6.8 g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Where Q1 and Q2 or Q3 and Q4 are used independently or simultaneously, the Absolute Maximum Ratings per diode are 50% of those of the single diode. ** : Total rating Electrical Characteristics (Q1, Q2, Q3, Q4 Common Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.60 F (1) F Forward voltage V I = 10mA 0.75 V F (2) F V I = 100mA 0.90 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MHz 0.9 pF T R I = 10mA (fig.1) Reverse recovery time t 1.6 ns rr F Start of commercial production 2000-12 1 2014-03-01 HN1D04FU Pin Assignment Marking (Top View) 6 5 4 Q3 B1 Q4 Q1 Q2 1 2 3 Fig. 1 Reverse Recovery Time (t ) Test Circuit rr 2 2014-03-01