HN2D01JE(TE85L,F) Toshiba

HN2D01JE TOSHIBA Diode Silicon Epitaxial Planar Type HN2D01JE Ultra High Speed Switching Application Unit: mm z The HN2D01JE is composed of 2 independent diodes. z Low forward voltage : V = 0.98V (typ.) F (3) z Fast reverse recovery time : t = 1.6ns (typ.) rr z Small total capacitance : C = 0.5pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 85 V RM 1.ANODE1 Reverse voltage V 80 V R 2.NC 3.ANODE2 Maximum (peak) forward current I 200 * mA FM 4.CATHODE2 Average forward current I 100 * mA 5.CATHODE1 O Surge current (10ms) I 1 * A FSM Power dissipation P 100 ** mW Junction temperature T 150 C j JEDEC Storage temperature T 55 to 150 C JEITA stg TOSHIBA 1-2W1B Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.003 mg (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating total rating = unit rating 1.5 **: Total rating. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.62 F (1) F Forward voltage V V I = 10mA 0.75 F (2) F V I = 100mA 0.98 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MHz 0.5 pF T R Reverse recovery time t I = 10mA, Fig.1 1.6 ns rr F Start of commercial production 2001-10 1 2014-03-01 HN2D01JE Pin Assignment (Top View) Marking 5 4 A1 Q1 Q2 1 2 3 Fig. 1 Reverse Recovery Time (t ) Test Circuit rr 2 2014-03-01