IDB30E120 Fast Switching Emitter Controlled Diode Product Summary Feature V RRM 1200 V 1200 V Emitter Controlled technology I 30 A F Fast recovery V 1.65 V F Soft switching T 150 C jmax Low reverse recovery charge PG-TO263-3-2 Low forward voltage Easy paralleling Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 IDB30E120 PG-TO263-3-2 - D30E120 NC C A Maximum Ratings, at T = 25 C, unless otherwise specified j Parameter Symbol Value Unit Repetitive peak reverse voltage V 1200 V RRM Continous forward current I A F T =25C 50 C T =90C 30 C Surge non repetitive forward current I 102 FSM T =25C, t =10 ms, sine halfwave C p Maximum repetitive forward current I 76.5 FRM T =25C, t limited by T , D=0.5 C p jmax W Power dissipation P tot T =25C 138 C T =90C 66 C -55...+150 C Operating and storage temperature T , T j stg Soldering temperature T 260 C S reflow soldering, MSL1 Page 1 Rev.2.3 2013-07-02IDB30E120 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics - - 0.9 K/W Thermal resistance, junction - case R thJC - - 62 Thermal resistance, junction - ambient, leaded R thJA SMD version, device on PCB: R thJA min. footprint - - 62 2 1) 6 cm cooling area - 35 - Electrical Characteristics, at T = 25 C, unless otherwise specified j Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current I A R V =1200V, T =25C - - 100 R j V =1200V, T =150C - - 2500 R j Forward voltage drop V V F I =30A, T =25C - 1.65 2.15 F j I =30A, T =150C - 1.7 - F j 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 Rev.2.3 2013-07-02