BY228 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS 949588 High voltage rectification Efficiency diode in horizontal deflection circuit MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BY228 BY228TR 2500 per 10 tape and reel 12 500 BY228 BY228TAP 2500 per ammopack 12 500 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BY228 V = 1500 V I = 3 A SOD-64 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT Reverse voltage See electrical characteristics BY228 V 1500 V R Repetitive peak reverse voltage l = 100 A V 1650 V R RRM Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM Average forward current I 3A F(AV) Junction temperature T 140 C j Storage temperature range T - 55 to + 175 C stg Non repetitive reverse avalanche energy l = 0.4 A E 10 mJ (BR)R R MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction ambient On PC board with spacing 25 mm R 70 K/W thJA Rev. 1.8, 12-Sep-12 Document Number: 86003 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BY228 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 5 A V -- 1.5 V F F V = 1500 V I -2 5 A R R Reverse current V = 1500 V, T = 140 C I - - 140 A R j R Total reverse recovery time I = 1 A, - dI /dt = 0.05 A/s t - - 20 s F F rr Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t -- 2 s F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 3.5 40 V = V R RRM 3.0 half sine wave 30 R = 25 K/W thJA 2.5 l = 10 mm 2.0 20 ll 1.5 1.0 10 R = 70 K/W thJA 0.5 PCB: d = 25 mm T = constant L 0 0 0725 505 100 125 150 0 5 10 15 202530 16408 94 9081 l - Lead Length (mm) T - Ambient Temperature (C) amb Fig. 1 - Typ. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 100 1000 V = V R RRM 10 100 1 0.1 10 0.01 0.001 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 16407 V - Forward Voltage (V) F 16409 T - Junction Temperature (C) j Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature Rev. 1.8, 12-Sep-12 Document Number: 86003 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (A) F R - Ther. Resist. Junction/Ambient (K/W) thJA I - Reverse Current (A) R I - Average Forward Current (A) FAV