HN1D02FE,LF Toshiba

HN1D02FE TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02FE Ultra High Speed Switching Application Unit: mm z The HN1D02FU is composed of 2 common cathode units. z Low forward voltage : V = 0.90V (typ.) F (3) z Fast reverse recovery time : t = 1.6ns (typ.) rr z Small total capacitance : C = 0.9pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R 1. ANODE Maximum (peak) forward current I 300* mA 2. ANODE FM 3. CATHODE Average forward current I 100* mA O 4. ANODE 5. ANODE Surge current (10ms) I 2* A FSM 6. CATHODE Power dissipation P 100** mW Junction temperature T 150 C j JEDEC Storage temperature T 55 to 150 C stg JEITA 1-2X1B TOSHIBA Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.003g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4). Where Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those for a single diode. **: Total rating. Electrical Characteristics (Q1, Q2, Q3, Q4 Common Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.60 F (1) F Forward voltage V I = 10mA 0.72 V F (2) F V I = 100mA 0.90 1.20 F (3) F I V = 30V 0.1 R (1) R Reverse current A I V = 80V 0.5 R (2) R Total capacitance C V = 0, f = 1MHz 0.9 pF T R I = 10mA (fig.1) Reverse recovery time t 1.6 ns rr F Start of commercial production 2002-04 1 2014-03-01 HN1D02FE Pin Assignment Marking (Top View) Unit 2 6 5 4 Q4 Q3 A3 Q1 Q2 1 2 3 Unit 1 Fig. 1 Reverse Recovery Time (t ) Test Circuit rr 2 2014-03-01