HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Ultra High Speed Switching Application Unit: mm Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF (3) = 0.90 V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6 ns (typ.) Small total capacitance Q1, Q2: CT = 0.9 pF (typ.) Unit 2 Low forward voltage Q3, Q4: VF (3) = 0.92 V (typ.) Fast reverse recovery time Q3, Q4: trr = 1.6 ns (typ.) Small total capacitance Q3, Q4: CT = 2.2 pF (typ.) Unit 1, Unit 2 Common Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 85 V RM Reverse voltage V 80 V R JEDEC Maximum (peak) forward current I 300 (*) mA FM JEITA SC-74 Average forward current I 100 (*) mA O TOSHIBA 12T1D Surge current (10 ms) I 2 (*) A FSM Weight: 15 mg (typ.) Power dissipation P (Note 3) 300 mW D T (Note 1) 150 j Junction temperature C T (Note 2) 125 j (Note 1) 55 to 150 Tstg Storage temperature C T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. Note 3: Total rating. (*) These are the Absolute Maximum Ratings for a single diode (Q1 or Q2 or Q3 or Q4). If Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those of a single diode. Start of commercial production 1992-05 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation HN1D03F Marking Pin Assignment (Top View) Fig.1 Reverse Recovery Time (t ) Test Circuit rr Unit 1 Electrical Characteristics (Q1, Q2 Common) (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.60 F (1) F Forward voltage V I = 10 mA 0.72 V F (2) F V I = 100 mA 0.90 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 0.9 3.0 pF T R Reverse recovery time t I = 10 mA (fig.1) 1.6 4.0 ns rr F Unit 2 Electrical Characteristics (Q3, Q4 Common) (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.61 F (1) F Forward voltage V I = 10 mA 0.74 V F (2) F V I = 100 mA 0.92 1.20 F (3) F I V = 30 V 0.1 R (1) R Reverse current A I V = 80 V 0.5 R (2) R Total capacitance C V = 0 V, f = 1 MHz 2.2 4.0 pF T R Reverse recovery time t I = 10 mA (fig.1) 1.6 4.0 ns rr F 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation