VS-25CTQ035-M3, VS-25CTQ040-M3, VS-25CTQ045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES Base 2 common 150 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical Anode 2 Anode strength and moisture resistance 13Common 3L TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 2 x 15 A F(AV) please see www.vishay.com/doc 99912 V 25 V, 40 V, 45 V R DESCRIPTION V at I 0.50 V F F The VS-25CTQ... center tap Schottky rectifier series has I max. 70 mA at 125 C RM been optimized for very low forward voltage drop, with T max. 150 C moderate leakage. The proprietary barrier technology allows J for reliable operation up to 150 C junction temperature. E 20 mJ AS Typical applications are in switching power supplies, Package 3L TO-220AB converters, freewheeling diodes, and reverse battery Circuit configuration Common cathode protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 30 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 990 A FSM p V 15 A , T = 125 C (per leg) 0.50 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-25CTQ035-M3 VS-25CTQ040-M3 VS-25CTQ045-M3 UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 102 C, rectangular waveform 30 A F(AV) C See fig. 5 Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 990 surge current per leg I condition and with rated A FSM 10 ms sine or 6 ms rect. pulse V applied 250 See fig. 7 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 3.0 A, L = 4.40 mH 20 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 3A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Aug-17 Document Number: 96274 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-25CTQ035-M3, VS-25CTQ040-M3, VS-25CTQ045-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 15 A 0.56 T = 25 C J 30 A 0.71 Maximum forward voltage drop per leg (1) V V FM See fig. 1 15 A 0.50 T = 125 C J 30 A 0.64 T = 25 C 1.75 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 70 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 900 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and T , T -55 to +150 C J Stg storage temperature range Maximum thermal resistance, DC operation 3.25 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 1.63 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2.0 g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 25CTQ035 Marking device Case style 3L TO-220AB 25CTQ040 25CTQ045 Revision: 17-Aug-17 Document Number: 96274 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000