VS-20CTQ150SHM3, VS-20CTQ150-1HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A 2 FEATURES TO-263AB (D PAK) TO-262AA 175 C T operation J Center tap configuration Low forward voltage drop High frequency operation Base Base High purity, high temperature epoxy common common encapsulation for enhanced mechanical cathode cathode strength and moisture resistance 2 2 Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak 2 2 of 260 C 1 3 1 3 Common Common cathode Anode Anode Anode cathode Anode AEC-Q101 qualified meets JESD-201 class 1A whisker test VS-20CTQ150SHM3 VS-20CTQ150-1HM3 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY 2 Package TO-263AB (D PAK), TO-262AA DESCRIPTION I 2 x 10 A F(AV) This center tap Schottky rectifier has been optimized for low V 150 V R reverse leakage at high temperature. The proprietary barrier V at I 0.66 V F F technology allows for reliable operation up to 175 C I max. 5.0 mA at 125 C RM junction temperature. Typical applications are in switching T max. 175 C power supplies, converters, freewheeling diodes, and J reverse battery protection. E 1.0 mJ AS Diode variation Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 20 A F(AV) V 150 V RRM I t = 5 s sine 1030 A FSM p V 10 A , T = 125 C (per leg) 0.66 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS VS-20CTQ150SHM3 PARAMETER SYMBOL UNITS VS-20CTQ150-1HM3 Maximum DC reverse voltage V R 150 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward per leg 10 current I 50 % duty cycle at T = 154 C, rectangular waveform F(AV) C per device 20 See fig. 5 A Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 1030 non-repetitive surge current per leg I load condition and with FSM 10 ms sine or 6 ms rect. pulse 180 See fig. 7 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 2 mH 1.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 21-Aug-14 Document Number: 95739 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20CTQ150SHM3, VS-20CTQ150-1HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS 10 A 0.80 0.88 T = 25 C J 20 A 0.90 1.0 Maximum forward voltage drop per leg (1) V V FM See fig. 1 10 A 0.63 0.66 T = 125 C J 20 A 0.73 0.77 T = 25 C 3.0 25 A Maximum reverse leakage current per leg J (1) I V = Rated V RM R R See fig. 2 T = 125 C 2.7 5.0 mA J Typical junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C - 280 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body - 8.0 nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range per leg 2.0 Maximum thermal resistance, R DC operation thJC junction to case per package 1.0 C/W Typical thermal resistance, Mounting surface, smooth and greased R 0.50 thCS case to heatsink (Only for TO-262) 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 2 Case style D PAK 20CTQ150SH Marking device Case style TO-262 20CTQ150-1H Revision: 21-Aug-14 Document Number: 95739 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000