VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, (Stud Version), 35 A, 40 A, 60 A FEATURES Low leakage current series Good surge current capability up to 1000 A Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DO-5 (DO-203AB) PRIMARY CHARACTERISTICS I 35 A, 40 A, 60 A F(AV) Package DO-5 (DO-203AB) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS (1) (1) (1) (1) 35 35 40 60 A I F(AV) (1) (1) (1) (1) T 140 140 150 140 C C 50 Hz 480 380 765 860 I A FSM (1) (1) (1) (1) 60 Hz 500 400 800 900 50 Hz 1140 730 2900 3700 2 2 I t A s 60 Hz 1040 670 2650 3400 2 2 I t 16 100 10 300 41 000 52 500 A s (1) (1) (1) (1) V Range 50 to 600 700 to 1000 50 to 600 50 to 600 V RRM T -65 to +200 -65 to +200 -65 to +200 -65 to +200 C J Note (1) JEDEC registered values ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM DIRECT RRM RM PEAK REVERSE VOLTAGE REVERSE VOLTAGE TYPE NUMBER (2) (2) (T = -65 C to +200 C ) (T = -65 C to +200 C ) J J V V (1) (1) VS-1N1183 VS-1N1183A VS-1N2128A 50 50 (1) (1) VS-1N1184 VS-1N1184A VS-1N2129A 100 100 (1) (1) VS-1N1185 VS-1N1185A VS-1N2130A 150 150 (1) (1) VS-1N1186 VS-1N1186A VS-1N2131A 200 200 (1) (1) VS-1N1187 VS-1N1187A VS-1N2133A 300 300 (1) (1) VS-1N1188 VS-1N1188A VS-1N2135A 400 400 (1) (1) VS-1N1189 VS-1N1189A VS-1N2137A 500 500 (1) (1) VS-1N1190 VS-1N1190A VS-1N2138A 600 600 (1) (1) VS-1N3765 700 700 (1) (1) VS-1N3766 800 800 (1) (1) VS-1N3767 900 900 (1) (1) VS-1N3768 1000 1000 Notes Basic type number indicates cathode to case. For anode to case, add R to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA (1) JEDEC registered values (2) For 1N1183 Series and 1N3765 Series T = -65 C to +190 C C Revision: 10-Jan-18 Document Number: 93492 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS (1) (1) (1) (1) 35 35 40 60 A Maximum average forward current 1-phase operation, I F(AV) at case temperature 180 sinusoidal conduction (1) (1) (1) (1) 140 140 150 140 C Half cycle 50 Hz Following any sine wave or 6 ms 480 380 765 860 rated load rectangular pulse condition and Half cycle 60 Hz with rated (1) (1) (1) (1) sine wave or 5 ms 500 400 800 900 V applied RRM rectangular pulse Maximum peak one cycle I A FSM non-repetitive surge current Half cycle 50 Hz Following any sine wave or 6 ms 570 455 910 1000 rated load rectangular pulse condition and with V Half cycle 60 Hz RRM applied following sine wave or 5 ms 595 475 950 1050 surge = 0 rectangular pulse t = 10 ms With rated V 1140 730 2900 3700 RRM applied following 2 Maximum I t for fusing surge, initial t = 8.3 ms 1040 670 2650 3400 T = T maximum J J 2 2 I t A s t = 10 ms With V = 0 1610 1030 4150 5250 RRM 2 Maximum I t for individual following surge, device fusing initial t = 8.3 ms 1470 940 3750 4750 T = T maximum J J 2 Maximum I t for individual t = 0.1 to 10 ms, 2 (2) 2 I t 16 100 10 300 41 500 52 500 A s device fusing V = 0 following surge RRM (1) (1) (1) (1) 1.7 1.8 1.3 1.3 V Maximum peak forward voltage V T = 25 C FM J at maximum forward current (I ) FM 110 110 126 188 A (1) V = 700 -5.0 -- RRM (1) V = 800 - 4.0 -- RRM Maximum rated I and T Maximum average F(AV) C (1) V = 900 I - 3.0 -- mA RRM R(AV) reverse current (1) V = 1000 - 2.0 -- RRM (1) (1) (1) Maximum rated I , V and T 10 -2.5 10 F(AV) RRM C Notes (1) JEDEC registered values (2) 2 2 I t for time t = I t x t x x THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1N11831N37651N1183A1N2128AUNITS Maximum operating (1) T -65 to +190 -65 to +200 C case temperature range C Maximum storage (1) T -65 to +175 -65 to +200 Stg temperature range Maximum internal thermal (1) (1) (1) R DC operation 1.00 1.1 0.65 thJC resistance, junction to case C/W Thermal resistance, R Mounting surface, smooth, flat and greased 0.25 thCS case to sink (2) Not lubricated thread, tighting on nut 3.4 (30) Maximum allowable (2) Lubricated thread, tighting on nut 2.3 (20) N m mounting torque (3) (lbf in) Not lubricated thread, tighting on hexagon 4.2 (37) (+ 0 %, - 10 %) (3) Lubricated thread, tighting on hexagon 3.2 (28) 17 g Approximate weight 0.6 oz. Case style JEDEC DO-5 (DO-203AB) Notes (1) JEDEC registered values (2) Recommended for pass-through holes (3) Recommended for holed threaded heatsinks Revision: 10-Jan-18 Document Number: 93492 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000