VS-1N1...A, VS-1N36..A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A FEATURES Voltage ratings from 50 V to 1000 V High surge capability Low thermal impedance High temperature rating Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260 DO-4 (DO-203AA) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 12 A F(AV) Package DO-4 (DO-203AA) Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 12 A I F(AV) T 150 C C 50 Hz 230 I A FSM 60 Hz 240 50 Hz 260 2 2 I t A s 60 Hz 240 T -65 to +200 C J V Range 50 to 1000 V RRM Note JEDEC registered values are in bold ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM RRM RSM V , MAXIMUM RMS V , MAXIMUM DIRECT R(RMS) RM REPETITIVE PEAK NON-REPETITIVE PEAK REVERSE VOLTAGE REVERSE VOLTAGE TYPE NUMBER REVERSE VOLTAGE REVERSE VOLTAGE (T = -65 C TO 200 C) (T = -65 C TO 200 C) C C (T = -65 C TO 200 C) (T = -65 C TO 200 C) C C V V V V VS-1N1199A 50 35 100 50 VS-1N1200A 100 70 200 100 VS-1N1201A 150 105 300 150 VS-1N1202A 200 140 350 200 VS-1N1203A 300 210 450 300 VS-1N1204A 400 280 600 400 VS-1N1205A 500 350 700 500 VS-1N1206A 600 420 800 600 VS-1N3670A 700 490 900 700 VS-1N3671A 800 560 1000 800 VS-1N3672A 900 630 1100 900 VS-1N3673A 1000 700 1200 1000 VS-1N3624 1000 1200 1400 1000 Notes JEDEC registered values are in bold Basic part number indicates cathode to case for anode to case, add R to part number, e.g., 1N1199RA Revision: 11-Jan-18 Document Number: 93493 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-1N1...A, VS-1N36..A Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 12 A Maximum average forward current 180 sinusoidal conduction I F(AV) at case temperature 150 C Half cycle 50 Hz sine wave 230 Following any rated load or 6 ms rectangular pulse condition and with rated Half cycle 60 Hz sine wave V applied RRM 240 or 5 ms rectangular pulse Maximum peak one cycle non-repetitive I A FSM surge current Half cycle 50 Hz sine wave 275 Following any rated load or 6 ms rectangular pulse condition and with V RRM Half cycle 60 Hz sine wave applied following surge = 0 V 285 or 5 ms rectangular pulse t = 10 ms With rated V applied 260 RRM 2 Maximum I t for fusing following surge, t = 8.3 ms 240 2 initial T = 200 C 2 J I t A s 2 t = 10 ms 370 Maximum I t for individual With V = 0 V following RRM device fusing surge, initial T = 200 C t = 8.3 ms J 340 2 Maximum I t for individual 2 (1) 2 I t t = 0.1 ms to 10 ms, V = 0 V following surge 3715 A s RRM device fusing Maximum forward voltage drop V I = 12 A (38 A peak), T = 25 C 1.35 V FM F(AV) C V = 50 V 3.0 RRM V = 100 V 2.5 RRM V = 150 V 2.25 RRM V = 200 V 2.0 RRM V = 300 V 1.75 RRM V = 400 V 1.5 Maximum average RRM (2) I Maximum rated I and T mA R(AV) F(AV) C reverse current V = 500 V 1.25 RRM V = 600 V 1.0 RRM V = 700 V 0.9 RRM V = 800 V 0.8 RRM V = 900 V 0.7 RRM V = 1000 V 0.6 RRM Notes JEDEC registered values are in bold (1) 2 2 I t for time t = I t x t x x (2) Maximum peak reverse current (I ) under same conditions 2 x rated I RM R(AV) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating case and T , T -65 to 200 C C Stg storage temperature range Maximum internal thermal R DC operation 2.0 thJC resistance, junction to case C/W Thermal resistance, R Mounting surface, smooth, flat and greased 0.5 thCS case to sink minimum 1.36 (12) Torque applied to nut non-lubricated threads maximum 1.69 (15) minimum 1.07 (9.45) N m Mounting torque Torque applied to nut lubricated threads (lbf in) maximum 1.30 (11.55) minimum 1.17 (10.35) Torque applied to device case lubricated threads maximum 1.43 (12.65) 7.0 g Approximate weight 0.25 oz. Case style JEDEC DO-4 (DO-203AA) Note JEDEC registered values are in bold Revision: 11-Jan-18 Document Number: 93493 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000