333 3 VS-20ETF...-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base 2 Glass passivated pellet chip junction cathode 2 150 C max operating junction temperature Low forward voltage drop and short reverse recovery time 1 Designed and qualified according to 1 3 JEDEC -JESD 47 3 Cathode Anode TO-220AC 2L Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES APPLICATIONS These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as 3D Models well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION PRIMARY CHARACTERISTICS The VS-20ETF... fast soft recovery rectifier series has been I 20 A F(AV) optimized for combined short reverse recovery time and low V 800 V, 1000 V, 1200 V R forward voltage drop. V at I 1.31 V F F The glass passivation ensures stable reliable operation in I 320 A FSM the most severe temperature and power cycling conditions. t 95 ns rr MECHANICAL DATA T max. 150 C J Case: TO-220AC 2L Snap factor 0.6 Molding compound meets UL 94 V-0 flammability rating Package TO-220AC 2L Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 800 to 1200 V RRM I Sinusoidal waveform 20 F(AV) A I 320 FSM t 1 A, 100 A/s 95 ns rr V 20 A, T = 25 C 1.31 V F J T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-20ETF08-M3 800 900 VS-20ETF10-M3 1000 1100 6 VS-20ETF12-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 113 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 270 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 320 10 ms sine pulse, rated V applied 365 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 515 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 5150 A s Revision: 29-Nov-2021 Document Number: 96214 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-20ETF...-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 20 A, T = 25 C 1.31 V FM J Forward slope resistance r 11.88 m t T = 150 C J Threshold voltage V 0.93 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 6 J RECOVERY CHARACTERISTICS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS I FM Reverse recovery time t 400 ns rr I at 20 A t F pk rr Reverse recovery current I 25 A/s 6.1 A rr t t a b t 25 C dir Reverse recovery charge Q 1.7 C rr dt Q rr Snap factor S Typical 0.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.9 thJC junction to case Maximum thermal resistance, R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 20ETF08 Marking device Case style TO-220AC 2L 20ETF10 20ETF12 Revision: 29-Nov-2021 Document Number: 96214 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000