S1MDF Green 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V (MAX) (V) I (A) Glass Passivated Die Construction RRM O F R(MAX) Surge Overload Rating to 30A Peak 1,000 1 1.1 5 High Current Capability Low-Profile Design, Package Height Less than 1.1mm Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (S1MDFQ) Description and Applications The S1MDF is a rectifier packaged in the low-profile D-FLAT Mechanical Data package. Providing high current capability for standard rectification, this device is ideal for use in general rectification applications such Case: D-FLAT as: Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Switching Mode Power Supplies Moisture Sensitivity: Level 1 per J-STD-020 Chargers Terminals: Finish - Matte Tin Annealed over Copper Leadframe. LED lightings e3 Solderable per MIL-STD-202, Method 208 Inverters Polarity: Cathode Band AC/DC Adapters Weight: 0.035 grams (Approximate) D-FLAT Top View Ordering Information (Note 4) Part Number Compliance Case Packaging S1MDF-13 AEC-Q101 D-FLAT 10,000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See S1MDF Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 1,000 V V RWM DC Blocking Voltage (Note 5) V R RMS Reverse Voltage V 700 V R(RMS) Average Rectified Output Current T = +100C I 1.0 A A O Non-Repetitive Peak Forward Surge Current 8.3ms I 30 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Terminal (Note 7) R 34 C/W JT Typical Thermal Resistance, Junction to Air (Note 7) R 88 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 5) 1,000 V V I = 5A (BR)R R 0.94 1.1 I = 1A, T = +25C F J Forward Voltage V V F 0.84 I = 1A, T = +125C F J 0.11 5 A V = 1,000V, T = +25C R J Reverse Leakage Current (Note 5) I R 0.004 mA V = 1,000V, T = +125C R J Total Capacitance 6 pF C V = 4V , f = 1MHz T R DC Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Device mounted on FR-4 substrate, 1 x 1 , 2oz., single-sided, PC boards with 0.1 x 0.15 copper pads. 7. Device mounted on FR-4 substrate, 0.4 x 0.5 , 2oz., single-sided, PC boards with 0.2 x 0.25 copper pads. 1.8 100 1.6 T = 150C A 1.4 10 T = 125C 1.2 A Note 7 1 1 T = 85C A 0.8 T = 100C A Note 6 0.6 T = 25C A 0.1 0.4 T = -55C A 0.2 0.01 0 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (C) V , FORWARD VOLTAGE (V) F A Figure 1 DC Forward Current Derating Figure 2 Instantaneous Forward Voltage 2 of 4 S1MDF June 2016 Diodes Incorporated www.diodes.com Document number: DS37914 Rev. 3 - 2 ADVANCED INFORMATION NEW PRODUCT I , DC FORWARD CURRENT (A) F I , INSTANTANEOUS FORWARD CURRENT (A) F