VS-20ETF..PbF Series, VS-20ETF..-M3 Series
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Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
Base
Glass passivated pellet chip junction
cathode
150 C max operating junction temperature
2
Low forward voltage drop and short reverse
recovery time
2
Designed and qualified according to
3
1 3 JEDEC -JESD 47
1
Cathode Anode
TO-220AC
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
PRODUCT SUMMARY
Package TO-220AC These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
I 20 A
F(AV)
well as in input rectification where severe restrictions on
V 800 V, 1000 V, 1200 V
R
conducted EMI should be met.
V at I 1.31 V
F F
I 320 A
FSM
DESCRIPTION
t 95 ns
rr
The VS-20ETF... fast soft recovery rectifier series has been
T max. 150 C
J
optimized for combined short reverse recovery time and low
Diode variation Single die
forward voltage drop.
Snap factor 0.6
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V 800 to 1200 V
RRM
I Sinusoidal waveform 20
F(AV)
A
I 320
FSM
t 1 A, 100 A/s 95 ns
rr
V 20 A, T = 25 C 1.31 V
F J
T Range -40 to +150 C
J
VOLTAGE RATINGS
V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I
RRM RSM RRM
PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C
V V mA
VS-20ETF08PbF, VS-20ETF08-M3 800 900
VS-20ETF10PbF, VS-20ETF10-M3 1000 1100 6
VS-20ETF12PbF, VS-20ETF12-M3 1200 1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I T = 113 C, 180 conduction half sine wave 20
F(AV) C
10 ms sine pulse, rated V applied 270 A
RRM
Maximum peak one cycle
I
FSM
non-repetitive surge current
10 ms sine pulse, no voltage reapplied 320
10 ms sine pulse, rated V applied 365
RRM
2 2 2
Maximum I t for fusing I t A s
10 ms sine pulse, no voltage reapplied 515
2 2 2
Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 5150 A s
Revision: 11-Feb-16 Document Number: 94098
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-20ETF..PbF Series, VS-20ETF..-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum forward voltage drop V 20 A, T = 25 C 1.31 V
FM J
Forward slope resistance r 11.88 m
t
T = 150 C
J
Threshold voltage V 0.93 V
F(TO)
T = 25 C 0.1
J
Maximum reverse leakage current I V = Rated V mA
RM R RRM
T = 150 C 6
J
RECOVERY CHARACTERISTICS
PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS
I
FM
Reverse recovery time t 400 ns
rr
I at 20 A t
F pk rr
Reverse recovery current I 25 A/s 6.1 A
rr t t
a b
t
25 C
dir
Reverse recovery charge Q 1.7 C
rr
dt Q
rr
Snap factor S Typical 0.6 I
RM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum junction and storage
T , T -40 to +150 C
J Stg
temperature range
Maximum thermal resistance,
R DC operation 0.9
thJC
junction to case
Maximum thermal resistance,
R 62 C/W
thJA
junction to ambient
Typical thermal resistance,
R Mounting surface, smooth and greased 0.5
thCS
case to heatsink
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque
(lbf in)
maximum 12 (10)
20ETF08
Marking device Case style TO-220AC 20ETF10
20ETF12
Revision: 11-Feb-16 Document Number: 94098
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000