333 3 VS-20ETF12SLHM3 www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base Meets MSL level 1, per J-STD-020, cathode LF maximum peak of 245 C + 2 Glass passivated pellet chip junction AEC-Q101 qualified 2 Meets JESD 201 class 1A whisker test 3 Flexible solution for reliable AC power rectification 1 13 Anode -- Anode 2 High surge, low V rugged blocking diode for DC charging D PAK (TO-263AB) F stations Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 20 A F(AV) V 1200 V R APPLICATIONS V at I 1.31 V F F Input rectification I 355 A FSM On-board and off-board EV / HEV battery chargers t 95 ns rr T max. 150 C J DESCRIPTION 2 Package D PAK (TO-263AB) The VS-20ETF12SLHM3 soft recovery rectifier series has Circuit configuration Single been optimized for combined short reverse recovery tim e Snap factor 0.6 and low forward voltage drop. The glass passivation ensures stable reliable operation in ADDITIONAL RESOURCES the most severe temperature and power cycling conditions. 3D Models MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 20 A F(AV) V 1200 V RRM I 355 A FSM V 20 A, T = 25 C 1.31 V F J t 1 A, 100 A/s 95 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-20ETF12SLHM3 1200 1300 6 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 97 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 300 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 355 10 ms sine pulse, rated V applied 450 RRM 2 2 2 t for fusing I t s Maximum I A 10 ms sine pulse, no voltage reapplied 635 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 6350 A s Revision: 25-Sep-2019 Document Number: 96487 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-20ETF12SLHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 20 A, T = 25 C 1.31 V FM J Forward slope resistance r 11.88 m t T = 150 C J Threshold voltage V 0.93 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 6 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I Reverse recovery time t 400 ns FM rr I at 20 A t F pk rr Reverse recovery current I 25 A/s 6.1 A rr t t a b t 25 C dir Reverse recovery charge Q 1.7 C rr dt Q rr I Snap factor S Typical 0.6 RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.9 thJC junction to case C/W Maximum thermal resistance, (1) R 62 thJA junction to ambient (PCB mount) 2g Approximate weight 0.07 oz. 2 Marking device Case style D PAK (TO-263AB) 20ETF12SLH Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. Revision: 25-Sep-2019 Document Number: 96487 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000