VS-20ETF06SLHM3 www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base Glass passivated pellet chip junction cathode + Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C AEC-Q101 qualified 2 Meets JESD 201 class 1A whisker test 3 13 Flexible solution for reliable AC power 1 Anode -- Anode 2 rectification D PAK (TO-263AB) High surge, low V rugged blocking diode for DC charging F stations Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 20 A F(AV) APPLICATIONS V 600 V R On-board and off-board EV / HEV battery chargers V at I 1.3 V F F Renewable energy inverters IFSM 300 A t 60 ns rr DESCRIPTION T max. 150 C J The VS-20ETF06SLHM3 soft recovery rectifier series has Snap factor 0.6 been optimized for combined short reverse recovery time 2 Package D PAK (TO-263AB) and low forward voltage drop. Circuit configuration Single The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 20 A F(AV) V 600 V RRM I 300 A FSM V 10 A, T = 25 C 1.2 V F J t 1 A, 100 A/s 60 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-20ETF06SLHM3 600 700 5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 97 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 250 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 316 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s Revision: 22-Feb-18 Document Number: 96119 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20ETF06SLHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A, T = 25 C 1.30 J Maximum forward voltage drop V V FM 60 A, T = 25 C 1.67 J Forward slope resistance r 12.5 m t Threshold voltage V T = 150 C 0.9 V F(TO) J T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 5.0 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I Reverse recovery time t 160 ns FM rr I at 20 A t F pk rr Reverse recovery current I 100 A/s 10 A rr t t a b t 25 C dir Reverse recovery charge Q 1.25 C rr dt Q rr I Snap factor S Typical 0.6 RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.9 thJC junction to case C/W Maximum thermal resistance (1) R 40 thJA junction to ambient (PCB mount) Soldering temperature T 260 C S 2g Approximate weight 0.07 oz. 2 Marking device Case style D PAK (TO-263AB) 20ETF06SH Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. Revision: 22-Feb-18 Document Number: 96119 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000