VS-20CTH03FP-N3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop 175 C operating junction temperature 1 Low leakage current 2 3 Fully isolated package (V = 2500 V ) INS RMS 3L TO-220 FullPAK UL pending Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance 2 Common please see www.vishay.com/doc 99912 cathode 1 3 Anode Anode DESCRIPTION / APPLICATIONS VS-20CTH03FP-N3 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. PRIMARY CHARACTERISTICS The planar structure and the platinum doped life time I 2 x 10 A F(AV) control, guarantee the best overall performance, V 300 V R ruggedness and reliability characteristics. V at I 0.85 V F F These devices are intended for use in the output rectification t typ. See Recovery table rr stage of SMPS, UPS, DC/DC converters as well as T max. 175 C J freewheeling diodes in low voltage inverters and chopper Package 3L TO-220 FullPAK motor drives. Circuit configuration Common cathode Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 300 V RRM per diode T = 135 C 10 C Average rectified forward current I F(AV) per device 20 A Non-repetitive peak surge current I T = 25 C 120 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 10 A - 1.05 1.25 F Forward voltage V F I = 10 A, T = 125 C - 0.85 0.95 F J V = V rated - - 20 R R Reverse leakage current I A R T = 125 C, V = V rated - 6 200 J R R Junction capacitance C V = 300 V - 30 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 11-Dec-2018 Document Number: 96432 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20CTH03FP-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 1 A, dI /dt = 100 A/s, V = 30 V - - 30 F F R Reverse recovery time t ns rr T = 25 C -31 - J T = 125 C - 42 - J I = 10 A F T = 25 C - 2.4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.6 - J V = 200 V R T = 25 C - 36 - J Reverse recovery charge Q nC rr T = 125 C - 120 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, junction-to-case per Mounting surface, flat, smooth, R -- 3.9 C/W thJC diode and greased Marking device Case style 3L TO-220 FullPAK 20CTH03FP 100 100 T = 175 C J 10 T = 150 C J T = 125 C J 1 T = 100 C J 10 T = 175 C J T = 75 C 0.1 J T = 125 C J T = 25 C J T = 50 C J 0.01 T = 25 C J 1 0.001 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 50 100 150 200 250 300 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-Dec-2018 Document Number: 96432 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous F Forward Current (A) I - Reverse Current (A) R