333 3 VS-20CTH03S-M3, VS-20CTH03-1-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 2 1 175 C operating junction temperature 1 3 Meets MSL level 1, per J-STD-020, LF maximum peak 2 2 of 245 C D PAK (TO-263AB) 3 TO-262AA Meets JESD 201, class 1A whisker test Base Base common common cathode cathode Material categorization: for definitions of compliance 2 2 please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS Vishay Semiconductors 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized 2 2 performance of forward voltage drop and hyperfast 1 3 1 3 Common Common recovery time. Anode cathode Anode Anode cathode Anode The planar structure and the platinum doped life time control VS-20CTH03S-M3 VS-20CTH03-1-M3 guarantee the best overall performance, ruggedness and reliability characteristics. LINKS TO ADDITIONAL RESOURCES These devices are intended for use in the output rectificatio n stage of SMPS, UPS, DC/DC converters as well as 3D Models freewheeling diode in low voltage inverters and choppe r motor drives. Their extremely optimized stored charge and low recovery PRIMARY CHARACTERISTICS current minimize the switching losses and reduce over I 2 x 10 A F(AV) dissipation in the switching element and snubbers. V 300 V R MECHANICAL DATA V at I 0.85 V F F 2 t max. 35 ns rr Case: D PAK (TO-263AB), TO-262AA T max. 175 C Molding compound meets UL 94 V-0 flammability rating J 2 Package D PAK (TO-263AB), TO-262AA Terminal: matte tin plated leads, solderable per J-STD-002 Circuit configuration Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX.UNITS Peak repetitive reverse voltage V 300 V RRM per diode T = 160 C 10 C Average rectified forward current I F(AV) per device 20 A Non-repetitive peak surge current I T = 25 C 120 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 300 - - BR R R I = 10 A - 1.05 1.25 V F Forward voltage V F I = 10 A, T = 125 C - 0.85 0.95 F J V = V rated - - 20 R R Reverse leakage current I A R T = 125 C, V = V rated - 6 200 J R R Junction capacitance C V = 300 V - 30 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 18-Nov-2020 Document Number: 96386 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-20CTH03S-M3, VS-20CTH03-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 1.0 A, dI /dt = 100 A/s, V = 30 V - - 30 F F R Reverse recovery time t ns rr T = 25 C -31- J T = 125 C - 42 - J I = 10 A F T = 25 C - 2.4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.6 - J V = 200 V R T = 25 C - 36 - J Reverse recovery charge Q nC rr T = 125 C - 120 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R --1.5C/W thJC junction to case per diode Thermal resistance, R --70C/W thJA junction to ambient -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) 2 Case style D PAK (TO-263AB) 20CTH03S Marking device Case style TO-262AA 20CTH03-1 100 100 T = 175 C J 10 T = 150 C J T = 125 C J 1 T = 175 C J T = 100 C J T = 125 C J 10 T = 25 C J 0.1 T = 75 C J T = 50 C J 0.01 T = 25 C J 1 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 100 150 200 250 300 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 18-Nov-2020 Document Number: 96386 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward F Current (A) I - Reverse Current (A) R