333 3 VS-20CTH03SHM3, VS-20CTH03-1HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 10 A FRED Pt FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 2 175 C operating junction temperature 3 3 2 Meets MSL level 1, per J-STD-020, LF maximum 1 1 2 peak of 260 C TO-262AA D PAK (TO-263AB) Base Base AEC-Q101 qualified, meets JESD 201, class 2 whisker test common common Material categorization: for definitions of compliance cathode cathode 2 2 please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS Vishay Semiconductors 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized 2 2 performance of forward voltage drop and hyperfast 1 Common 3 1 Common 3 cathode cathode recovery time. Anode Anode Anode Anode VS-20CTH03SHM3 VS-20CTH03-1HM3 The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and LINKS TO ADDITIONAL RESOURCES reliability characteristics. These devices are intended for use in the output rectificatio n stage of SMPS, UPS, DC/DC converters as well as 3D Models freewheeling diode in low voltage inverters and choppe r motor drives. PRIMARY CHARACTERISTICS Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over I 2 x 10 A F(AV) dissipation in the switching element and snubbers. V 300 V R V at I 0.85 V F F MECHANICAL DATA t typ. 23 ns rr 2 Case: D PAK (TO-263AB), TO-262AA T max. 175 C J Molding compound meets UL 94 V-0 flammability rating 2 Package D PAK (TO-263AB), TO-262AA Terminal: matte tin plated leads, solderable per J-STD-002 Circuit configuration Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX.UNITS Peak repetitive reverse voltage V 300 V RRM per diode T = 160 C 10 C Average rectified forward current I F(AV) per device 20 A Non-repetitive peak surge current I T = 25 C 120 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 10 A - 1.05 1.25 F Forward voltage V F I = 10 A, T = 125 C - 0.85 0.95 F J V = V rated - - 20 R R Reverse leakage current I A R T = 125 C, V = V rated - 6 200 J R R Junction capacitance C V = 300 V - 30 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 12-Nov-2020 Document Number: 95671 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-20CTH03SHM3, VS-20CTH03-1HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 23 - F F R Reverse recovery time t T = 25 C -31 - ns rr J T = 125 C - 42 - J I = 10 A F T = 25 C - 2.4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.6 - J V = 200 V R T = 25 C - 36 - J Reverse recovery charge Q nC rr T = 125 C - 120 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -55 - 175 C J Stg range Thermal resistance, junction to case R -- 1.5 C/W thJC per diode Thermal resistance, junction to ambient R -- 70 C/W thJA -2.0 - g Weight -0.07- oz. 2 Case style D PAK (TO-263AB) 20CTH03SH Marking device Case style TO-262AA 20CTH03-1H 100 100 T = 175 C J 10 T = 150 C J T = 125 C J 1 T = 175 C J T = 100 C J T = 125 C J 10 T = 25 C J 0.1 T = 75 C J T = 50 C J 0.01 T = 25 C J 1 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 100 150 200 250 300 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 12-Nov-2020 Document Number: 95671 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward F Current (A) I - Reverse Current (A) R