VS-15AWL06FN-M3, VS-15EWL06FN-M3 www.vishay.com Vishay Semiconductors Ultralow V Ultrafast Rectifier, 15 A FRED Pt F FEATURES Ultrafast recovery time, extremely low V and F soft recovery 175 C maximum operating junction temperature For PFC DCM operation TO-252AA (D-PAK) Low leakage current Meets MSL level 1, per J-STD-020, LF maximum Base cathode 4, 2 2, 4 peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS 1 3 1 3 Anode Anode N/C Anode State of the art, ultralow V , soft-switching hyperfast F rectifiers optimized for Discontinuous (Critical) Mode (DCM) VS-15AWL06FN-M3 VS-15EWL06FN-M3 Power Factor Correction (PFC). The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and PRODUCT SUMMARY reduce over dissipation in the switching element and Package TO-252AA (D-PAK) snubbers. I 15 A The device is also intended for use as a freewheeling diode F(AV) in power supplies and other power switching applications. V 600 V R V at I 0.85 V F F t (typ.) 60 ns rr T max. 175 C J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 148 C 15 F(AV) C Non-repetitive peak surge current I T = 25 C 180 A FSM J Peak repetitive forward current I T = 148 C, f = 20 kHz, d = 50 % 30 FM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15 A - 0.99 1.05 F Forward voltage V F I = 15 A, T = 150 C - 0.85 0.92 F J V = V rated - - 10 R R Reverse leakage current I A R T = 150 C, V = V rated - - 120 J R R Junction capacitance C V = 600 V - 11 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 04-Oct-16 Document Number: 93568 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-15AWL06FN-M3, VS-15EWL06FN-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 60 120 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 190 - F F R Reverse recovery time t ns rr T = 25 C - 220 - J T = 125 C - 290 - J I = 15 A F T = 25 C - 21 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 25 - J V = 390 V R T = 25 C - 2.6 - J Reverse recovery charge Q C rr T = 125 C - 4 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.41.8 thJC junction to case per leg C/W Thermal resistance, R -- 70 thJA junction to ambient per leg 0.3 g Approximate weight 0.01 oz. 15AWL06FN Marking device Case style TO-252AA (D-PAK) 15EWL06FN Revision: 04-Oct-16 Document Number: 93568 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000