VS-20ETF..PbF Series, VS-20ETF..-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base Glass passivated pellet chip junction cathode 150 C max operating junction temperature 2 Low forward voltage drop and short reverse recovery time 2 Designed and qualified according to 3 1 3 JEDEC -JESD 47 1 Cathode Anode TO-220AC Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS PRODUCT SUMMARY Package TO-220AC These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as I 20 A F(AV) well as in input rectification where severe restrictions on V 800 V, 1000 V, 1200 V R conducted EMI should be met. V at I 1.31 V F F I 320 A FSM DESCRIPTION t 95 ns rr The VS-20ETF... fast soft recovery rectifier series has been T max. 150 C J optimized for combined short reverse recovery time and low Diode variation Single die forward voltage drop. Snap factor 0.6 The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 800 to 1200 V RRM I Sinusoidal waveform 20 F(AV) A I 320 FSM t 1 A, 100 A/s 95 ns rr V 20 A, T = 25 C 1.31 V F J T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-20ETF08PbF, VS-20ETF08-M3 800 900 VS-20ETF10PbF, VS-20ETF10-M3 1000 1100 6 VS-20ETF12PbF, VS-20ETF12-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 113 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 270 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 320 10 ms sine pulse, rated V applied 365 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 515 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 5150 A s Revision: 11-Feb-16 Document Number: 94098 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20ETF..PbF Series, VS-20ETF..-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 20 A, T = 25 C 1.31 V FM J Forward slope resistance r 11.88 m t T = 150 C J Threshold voltage V 0.93 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 6 J RECOVERY CHARACTERISTICS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS I FM Reverse recovery time t 400 ns rr I at 20 A t F pk rr Reverse recovery current I 25 A/s 6.1 A rr t t a b t 25 C dir Reverse recovery charge Q 1.7 C rr dt Q rr Snap factor S Typical 0.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.9 thJC junction to case Maximum thermal resistance, R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 20ETF08 Marking device Case style TO-220AC 20ETF10 20ETF12 Revision: 11-Feb-16 Document Number: 94098 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000