333 3 VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 20 A FEATURES Base Glass passivated pellet chip junction cathode + Designed and qualified according to 2 JEDEC -JESD 47 Meets MSL level 1, per J-STD-020, 2 1 LF maximum peak of 245 C Material categorization: for definitions of compliance 3 13 please see www.vishay.com/doc 99912 Anode -- Anode 2 D PAK (TO-263AB) APPLICATIONS PRIMARY CHARACTERISTICS Output rectification and freewheeling in inverters, I 20 A F(AV) choppers and converters V 800 V, 1000 V, 1200 V R Input rectifications where severe restrictions on V at I 1.31 V F F conducted EMI should be met I 355 A FSM DESCRIPTION t 95 ns rr T max. 150 C J The VS-20ETF..S-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low Snap factor 0.6 2 forward voltage drop. Package D PAK (TO-263AB) Circuit configuration Single The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. ADDITIONAL RESOURCES 3D Models MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 20 A F(AV) V 800 to 1200 V RRM I 355 A FSM V 20 A, T = 25 C 1.31 V F J t 1 A, 100 A/s 95 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA 20ETF08S-M3 800 900 20ETF10S-M3 1000 1100 6 20ETF12S-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 97 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 300 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 355 10 ms sine pulse, rated V applied 450 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 635 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 6350 A s Revision: 25-Sep-2019 Document Number: 94887 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 20 A, T = 25 C 1.31 V FM J Forward slope resistance r 11.88 m t T = 150 C J Threshold voltage V 0.93 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 6 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I FM Reverse recovery time t 400 ns rr I at 20 A t F pk rr Reverse recovery current I 25 A/s 6.1 A rr t t a b t 25 C dir Reverse recovery charge Q 1.7 C rr dt Q rr Snap factor S Typical 0.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.9 thJC junction to case C/W Maximum thermal resistance, (1) R 62 thJA junction to ambient (PCB mount) 2g Approximate weight 0.07 oz. 20ETF08S 2 Marking device Case style D PAK (TO-263AB) 20ETF10S 20ETF12S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. For recommended footprint and soldering techniques refer to application note AN-994 150 150 20ETF.. Series 20ETF.. Series R (DC) = 0.9 K/W R (DC) = 0.9 K/W thJC thJC 140 140 Conduction period 130 130 Conduction angle 120 120 30 60 60 110 110 90 90 30 120 120 DC 180 180 100 100 0 5 10 15 20 25 025310 15 2050 35 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 25-Sep-2019 Document Number: 94887 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)