X-On Electronics has gained recognition as a prominent supplier of VS-20ETS08PBF Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-20ETS08PBF Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

VS-20ETS08PBF Vishay

VS-20ETS08PBF electronic component of Vishay
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Part No.VS-20ETS08PBF
Manufacturer: Vishay
Category: Rectifiers
Description: Rectifiers RECOMMENDED ALT 844-20ETS08-M3
Datasheet: VS-20ETS08PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 1.1719
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Obsolete
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MOQ : 1
Multiples : 1
1 : USD 1.7732
10 : USD 1.4729
100 : USD 1.2754
500 : USD 1.2058
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MOQ : 6
Multiples : 1
6 : USD 1.3396
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We are delighted to provide the VS-20ETS08PBF from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-20ETS08PBF and other electronic components in the Rectifiers category and beyond.

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VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES Very low forward voltage drop 150 C max. operating junction temperature 2 Glass passivated pellet chip junction 3 3 Designed and qualified according to 2 1 1 TO-220AC TO-220AB JEDEC -JESD 47 Material categorization: for definitions of compliance Base cathode Cathode to please see www.vishay.com/doc 99912 base 2 2 APPLICATIONS Input rectification Vishay Semiconductors switches and output rectifiers which are available in identical package outlines 13 1 3 Cathode Anode Anode Anode DESCRIPTION VS-20ETS.. VS-20ATS.. High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. PRODUCT SUMMARY Package TO-220AC, TO-220AB These devices are intended for use in main rectification (single or three phase bridge). I 20 A F(AV) V 800 V to 1200 V R V at I 1.1 V F F I 300 A FSM T max. 150 C J Diode variation Single die, common anode OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C A J 16.3 21 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 20 A F(AV) V 800/1200 V RRM I 300 A FSM V 10 A, T = 25 C 1.0 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-20ETS08PbF, VS-20ETS08-M3 800 900 VS-20ATS08PbF, VS-20ATS08-M3 1 VS-20ETS12PbF, VS-20ETS12-M3 1200 1300 VS-20ATS12PbF, VS-20ATS12-M3 Revision: 12-Oct-16 Document Number: 94341 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 20 F(AV) C 10 ms sine pulse, rated V applied 250 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 316 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 20 A, T = 25 C 1.1 V FM J Forward slope resistance r 10.4 m t T = 150 C J Threshold voltage V 0.85 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 1.3 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth, and greased 0.5 thCS case to heatsink 2 g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 20ETS08 Case style TO-220AC 20ETS12 Marking device 20ATS08 Case style TO-220AB 20ATS12 Revision: 12-Oct-16 Document Number: 94341 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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