HS1AFL - HS1MFL Taiwan Semiconductor 1A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement I 1 A F Low profile package V 50 - 1000 V RRM Low power loss, high efficiency I 30 A Fast switching for high efficiency FSM Moisture sensitivity level: level 1, per J-STD-020 T 150 C J MAX Compliant to RoHS Directive 2011/65/EU and Package SOD-123FL in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 APPLICATIONS High frequency rectification Freewheeling application Switching mode converters and inverters in computer and telecommunication. MECHANICAL DATA Case: SOD-123FL SOD-123FL Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: As marked Weight: 0.019 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M PARAMETER SYMBOL UNIT FL FL FL FL FL FL FL FL Marking code on the HAF HBF HDF HFF HGF HJF HKF HMF device Repetitive peak reverse V 50 100 200 300 400 600 800 1000 V RRM voltage Reverse voltage, total rms V 35 70 140 210 280 420 560 700 V R(RMS) value Forward current I 1 A F Surge peak forward current, 8.3 ms single half I 30 A FSM sine-wave superimposed on rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:A1804 HS1AFL - HS1MFL Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP. UNIT Junction-to-lead thermal resistance per diode R 17 C/W JL Junction-to-ambient thermal resistance per diode R 85 C/W JA Junction-to-case thermal resistance per diode R 19 C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT I = 0.5A, T = 25C 0.82 - F J V HS1AFL I = 1.0A, T = 25C 0.89 0.95 V F J HS1BFL (1) Forward voltage per diode V F HS1DFL I = 0.5A, T = 125C 0.67 - V F J HS1FFL I = 1.0A, T = 125C 0.75 0.81 V F J I = 0.5A, T = 25C 0.93 - V F J 1.01 1.30 V I = 1.0A, T = 25C F J (1) HS1GFL Forward voltage per diode V F I = 0.5A, T = 125C 0.74 - V F J I = 1.0A, T = 125C 0.85 1.10 V F J I = 0.5A, T = 25C 1.21 - V F J HS1JFL I = 1.0A, T = 25C 1.36 1.70 V F J (1) HS1KFL Forward voltage per diode V F I = 0.5A, T = 125C 0.94 - V F J HS1MFL 1.10 1.38 V I = 1.0A, T = 125C F J - 5 T = 25C A J (2) Reverse current rated V per diode I R R - 150 T = 125C A J HS1AFL HS1BFL HS1DFL 11 - pF HS1FFL Junction capacitance 1 MHz, V =4.0V C R J HS1GFL HS1JFL HS1KFL 6 - pF HS1MFL HS1AFL HS1BFL HS1DFL ns t - 50 rr I =0.5A ,I =1.0A HS1FFL F R Reverse recovery time HS1GFL I =0.25A RR HS1JFL HS1KFL ns t - 75 rr HS1MFL Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:A1804