X-On Electronics has gained recognition as a prominent supplier of HS1G F3 Rectifiers across the USA, India, Europe, Australia, and various other global locations. HS1G F3 Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

HS1G F3 Taiwan Semiconductor

HS1G F3 electronic component of Taiwan Semiconductor
HS1G F3 Taiwan Semiconductor
HS1G F3 Rectifiers
HS1G F3  Semiconductors

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See Product Specifications
Part No. HS1G F3
Manufacturer: Taiwan Semiconductor
Category: Rectifiers
Description: Rectifiers 50ns 1A 400V High Ef f Recovery Rectifie
Datasheet: HS1G F3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.475 ea
Line Total: USD 0.48 
Availability - 2797
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2797
Ship by Fri. 07 Mar to Tue. 11 Mar
MOQ : 1
Multiples : 1
1 : USD 0.475
10 : USD 0.33
100 : USD 0.1608
1000 : USD 0.1056
1800 : USD 0.0968

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the HS1G F3 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the HS1G F3 and other electronic components in the Rectifiers category and beyond.

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HS1A thru HS1M Taiwan Semiconductor CREAT BY ART High Efficient Surface Mount Rectifiers FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - Fast switching for high efficiency - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 DO-214AC (SMA) Base P/N with suffix on packing code - Green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A HS HS HS HS HS HS HS HS PARAMETER SYMBOL UNIT 1A 1B 1D 1F 1G 1J 1K 1M Maximum repetitive peak reverse voltage V 50 100 200 300 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 210 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 300 400 600 800 1000 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.0 1.3 1.7 V F 1 A 5 Maximum reverse current rated VR T =25 J T =100 I 50 A J R T =125 150 J Maximum reverse recovery time (Note 2) Trr 50 75 ns Typical junction capacitance (Note 3) 20 15 Cj pF O Typical thermal resistance R 70 JA C/W O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 STG C Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS D1405050 Version: I14HS1A thru HS1M Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE R3 SMA 1,800 / 7 Plastic reel R2 SMA 7,500 / 13 Paper reel M2 SMA 7,500 / 13 Plastic reel Prefix F3 Folded SMA 1,800 / 7 Plastic reel HS1x Suffix (Note 1) F2 Folded SMA 7,500 / 13 Paper reel F4 Folded SMA 7,500 / 13 Plastic reel E3 Clip SMA 1,800 / 7 Plastic reel N/A E2 Clip SMA 7,500 / 13 Plastic reel Note 1: defines voltage from 50V (HS1A) to 1000V (HS1M) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PART NO. PACKING CODE DESCRIPTION QUALIFIED CODE HS1M R3 HS1M R3 HS1M R3G R3 G Green compound HS1M HS1MHR3 H R3 AEC-Q101 qualified HS1M RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM AVERAGE FORWARD CURRENT DERATING 1000 1.2 1 TJ=125 100 0.8 0.6 TJ=25 0.4 10 0.2 0 1 80 90 10 0 11 0 12 0 13 0 14 0 15 0 0 20 40 60 80 100 120 140 o LEAD TEMPERATURE ( C) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 4- TYPICAL INSTANTANEOUS FORWARD FIG. 3- MAXIMUM NON-REPETITIVE FORWARD CHARACTERISTICS SURGE CURRENT 100 40 35 HS1A-HS1D 30 10 8.3ms Single Half Sine Wave 25 20 HS1G 1 15 10 5 HS1J-HS1M 0. 1 1 10 100 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 NUMBER OF CYCLES AT 60 Hz FORWARD VOLTAGE (V) Document Number: DS D1405050 Version: I14 AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE URRENT (A) INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT (A) (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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